KSO200P03S KEXIN | Alldatasheet
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Ideal for fast switching buck converter Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs steady state Unit Continuous drain current T A=25 -9.1 -7.4 TA=70 -7.3 -5.9 Pulsed drain current T A=25 I DP A Avalanche energy, single pulse *1 E AS mJ Reverse diode dv /dt *2 d v /dt kV/ s Gate source voltage V GS V Power dissipation P D 2.36 1.56 W Thermal resistance,junction - soldering point R thJS K/W Thermal resistance,junction - ambient R thJA K/W Operating and storage temperature T j,T stg *1 ID=-9.1A, RGS=25 *2 ID=-9.1A, VDS=20 V,di /dt =200 A/ s,Tj,max=150 -55 to 150 ID 110 A -37 MOS Small Signal Transistor KSO200P03S(BSO200P03S)
www.kexin.com.cn2 SMD Type ICSMD Type MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-source breakdown voltage V DSS VGS=0 V, ID=-250 A -30 V VDS=-30V, VGS=0V,Tj=25 -0.1 -1 VDS=-30 V, VGS=0 V,Tj=125 -10 -100 Gate-source leakage current I GSS VGS= 25 V, VDS=0 V 100 nA Gate threshold voltage V GS(th) VDS=VGS,I D=-100 A -1 -1.5 V Drain-source on-state resistance R DS(on) VGS=-10 V, ID=-9.1A 16.7 20.0 m Forward Transconductance g fs |VDS|>2|ID|RDS(on)max,ID=-7.3 A 11 21 S Input capacitance C iss 1750 2330 Output capacitance C oss 470 625 Reverse transfer capacitance C rss 390 580 Turn-on delay time t d(on) 10 53 Rise time t r 11 17 Turn-off delay time t d(off) 42 63 Fall time t f 33 50 Gate to source charge Q gs 4.8 6.4 Gate charge at threshold Q g(th) 2.6 3.5 Gate to drain charge Q gd 14 Switching charge Q sw 16 24 Gate charge total Q g 40 54 Output charge Q oss VDD=-15V, VGS=0V 14 19 nC Reverse recovery time trr 19 24 ns Reverse recovery charge Q rr 91 1 n C Diode continous forward current I S -2.1 A Diode pulse curret I SM -36.5 A Diode forward voltage V SD VGS=0 V, IF=-9.1 A,Tj=25 -0.88 -1.2 V nC VR=15V, IF=-9.1A,diF/dt =100A/ s A VGS=0V, VDS=-25V,f =1 MHz VDD=-15 V,VGS=-10 V,ID=-1A, RG=6 pF ns IDSSZero gate voltage drain current TA=25 VDD=-24V, ID=9.1A,VGS=0 to-10 V KSO200P03S(BSO200P03S)