KSE800 FAIRCHILD | Alldatasheet
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KSE800/801/ 803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN h FE = 750 @ IC = 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
- Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (T C =25 °C ) Characteristic Symbol Rating Unit Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (T C =25 °C ) Junction Temperature Storage Temperature V CBO V CEO V EBO IC IB P C T J T STG 0.1 150 -55 ~ 150 V V V V V A A W Characteristic Symbol Test Condition Min Max Unit Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current : KSE800/801 : KSE802/803 Collector Cutoff Current Emitter Cutoff Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICES BV CEO I CEO I CBO I EBO h FE V CE (sat) V BE (on) I C = 50mA, I B = 0 V CE = 60V, I B = 0 V CE = 80V, I B = 0 V CB = Rated BV CEO , I E = 0 V CB = Rated BV CEO , I E = 0 T C = 100 °C V BE = 5V, I C = 0 V CE = 3V, I C = 1.5A V CE = 3V, I C = 2A V CE = 3V, I C = 4A I C = 1.5A, I B = 30mA I C = 2A, I B = 40mA I C = 4A, I B = 40mA V CE = 3V, I C = 1.5A V CE = 3V, I C = 2A V CE = 3V, I C = 4A 750 750 100 100 100 100 500 2.5 2.8 1.2 2.5 V V µA µA µA µA mA V V V V V V TO-126 1. Emitter 2. Collector 3. Base 1999 Fairchild Semiconductor Corporation Rev. B
KSE800/801/ 803 SILICON DARLINGTON TRANSISTOR
ACEx™ CoolFET™ CROSSVO LT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST ® FAS Tr™ G TO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPO RT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPRO VAL OF FAIRCHILD SEMICONDUC TOR CORPOR ATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT S TATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT Y, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.