KSE13003_08 FAIRCHILD | Alldatasheet

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KSE13003 — NPN Silicon Transistor © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSE13003 Rev. 1.0.0 1 March 2008 KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications

  • High Voltage Capability
  • High Speed Switching
  • Suitable for Switching Regulator and Motor Control Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. hFE Classification * Test on VCE = 2V, IC = 0.5A. Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3 A IB Base Current 0.75 A PC Collector Dissipation (TC = 25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature Range -65 ~ 150 °C Classification H1 H2 H3 hFE* 9 ~ 16 14~ 21 19 ~ 26

1 TO-126

  1. Emitter 2.Collector 3.Base

KSE13003 — NPN Silicon Transistor © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSE13003 Rev. 1.0.0 2 Electrical Characteristics TC = 25°C unless otherwise noted * Pulse Test: Pulse Width=5ms, Duty Cycle£10% Package Marking and Ordering Information Notes_2 : 1) The Affix “-H1/-H2/-H3” means the hFE classification. 2) The Sufix “-STU” means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max Units BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 10 mA hFE *DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC =1A VCE(sat) *Collector Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 V V V VBE(sat) *Base Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A 1.2 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz 21 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A 4 MHz tON Turn On Time VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125W 1.1 ms tSTG Storage Time 4.0 ms tF Fall Time 0.7 ms Device Item (notes_2) Device Marking Package Packing Method Remarks KSE13003H1ASTU 1 E13003 TO-126 TUBE KSE13003H2ASTU 2 E13003 TO-126 TUBE KSE13003H3ASTU 3 E13003 TO-126 TUBE

KSE13003 NPN Silicon Transistor KSE13003 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSE13003 Rev. 1.0.0 4