KSD986 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor K S D 9 8 6
DESCRIPTION
- Collector–Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min.)
- DC Current Gain- : hFE = 2000(Min) @ IC= 1A
- Low Collector Saturation Voltage
APPLICATIONS
- They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current 0.15 A PC Collector Power Dissipation Ta=25℃ 1.0 W Collector Power Dissipation TC=25℃ 10 Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor K S D 9 8 6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 1A; IB= 1mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage I C= 1A; IB= 1mA 2.0 V ICBO Collector Cutoff Current V CB= 60V; IE= 0 10 μA ICER Collector Cutoff Current V CE=60V;RBE=51Ω;TC=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 60V; VBE(off)= -1.5A 10 μA VCE= 60V; VBE(off)= -1.5A TC=125℃ 1.0 mA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain I C= 0.5A; VCE= 2V 1000 hFE-2 DC Current Gain I C= 1A; VCE= 2V 2000 30000 Switching Times ton Turn-on Time IC=1.0A; IB1=-IB2=1.0mA VCC=50V; RL=50Ω 0.5 μs tstg Storage Time 1.0 μs tf Fall Time 1.0 μs hFE-2 Classifications R O Y 2000-5000 4000-10000 8000-30000