KSD880W ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconNPNPowerTransistor KSD880W
DESCRIPTION
- Complement to KSB834W
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 60 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 3 A PC TotalPowerDissipation @Ta=25℃ 1.5 W PC TotalPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconNPNPowerTransistor KSD880W ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=3.0A;IB=300mA 1 V VBE(on) Base-EmitterOnVoltage IC=0.5A;VCE=5V 1 V ICBO CollectorCutoffCurrent VCB=60V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=7V;IC=0 100 μA hFE1 DCCurrentGain IC=0.5A;VCE=5V 60 200 hFE2 DCCurrentGain IC=3A;VCE=5V 20 fT Current-Gain—BandwidthProduct IC=0.5A;VCE=5V 9 MHz Cob Collectoroutputcapacitance VCB=10V,IE=0,f=1MHz 150 pF hFE-1 Classifications O Y 60-120 100-200