KSD794 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD794
DESCRIPTION
- High Collector Current -IC= 3A
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 45V(Min)
- Complement to Type KSB744
APPLICATIONS
- Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 5 A IB Base Current-Continuous 0.6 A PC Collector Power Dissipation @ TC=25℃ 10 W Collector Power Dissipation @ Ta=25℃ 1 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD794
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Sa turation Voltage I C= 1.5A; IB= 0.15A 2.0 V VBE(sat) Base-Emitter Satu ration Voltage I C= 1.5A; IB= 0.15A 2.0 V ICBO Collector Cutoff Current V CB= 45V; IE= 0 1.0 μA IEBO Emitter Cutoff Current V EB= 3V; IC= 0 1.0 μA hFE-1 DC Current Gain I C= 20mA; VCE= 5V 30 hFE-2 DC Current Gain I C= 0.5A; VCE= 5V 60 320 fT Current-Gain—Bandwidth Product I C= 0.1A; VCE= 5V 60 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 40 pF hFE-2 Classifications R O Y 60-120 100-200 160-320