KSD5703 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD5703
DESCRIPTION
- High Breakdown Voltage- ：VCBO= 1500V (Min)
- High Switching Speed
- Low Saturation Voltage
APPLICATIONS
- Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A IC Collector Current- Pulse 30 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD5703
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 8A; IB= 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage I C= 8A; IB= 1.6A 1.5 V ICES Collector Cutoff Current V CE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current V CB= 800V; IE= 0 10 μA ICBO Collector Cutoff Current V EB= 4V; IC= 0 1 mA hFE-1 DC Current Gain I C= 1A; VCE= 5V 15 40 hFE-2 DC Current Gain I C= 8A; VCE= 5V 5.3 7.3 tf Fall Time IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3Ω 0.3 μs