KSD569 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD569
DESCRIPTION
- High Collector Current:: IC= 7A
- Low Collector Saturation Voltage : V CE(sat)= 0.5V(Max)@IC= 5A
- Complement to Type KSB708
APPLICATIONS
- Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3.5 A PC Total Power Dissipation @ TC=25℃ 40 W Total Power Dissipation @ Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD569
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage I C= 5A; IB= 0.5A 0.5 V VBE(sat) Base-Emitter Saturation Voltage I C= 5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current V CB= 80V; IE= 0 10 μA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 10 μA hFE-1 DC Current Gain I C= 3A; VCE= 1V 40 200 hFE-2 DC Current Gain I C= 5A; VCE= 1V 20 hFE-1 Classifications R O Y 40-80 60-120 100-200