KSD560 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor KSD560
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 100V(Min)
- High DC Current Gain : h FE= 2000(Min) @IC= 3.0A
- Low Saturation Voltage
- Complement to Type KSB601
APPLICATIONS
- Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ Ta=25℃ 1.5 W Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor KSD560
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage I C= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current V CB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current V EB= 5V; IC=0 3 mA hFE-1 DC Current Gain I C= 3A; VCE= 2V 2000 15000 hFE-2 DC Current Gain I C= 5A; VCE= 2V 500 Switching times ton Turn-on Time IC= 3A, IB1= -IB2= 3mA RL= 16.7Ω; VCC≈50V 1.0 μs tstg Storage Time 3.5 μs tf Fall Time 1.2 μs hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 3 isc Silicon NPN Darlington Power Transistor 2SD560