KSD526 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD526
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 80V(Min)
- Good Linearity of hFE
- Collector Power Dissipation- : P C= 30W(Max)@ TC= 25℃
- Complement to Type KSB596
APPLICATIONS
- Designed for power amplifier applications.
- Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD526
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 50mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage I C= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage I C= 3A; VCE= 5V 1.5 V ICBO Collector Cutoff Current V CB= 80V; IE= 0 30 μA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain I C= 0.5A; VCE= 5V 40 240 hFE-2 DC Current Gain I C= 3A; VCE= 5V 15 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 90 pF fT Current-Gain—Bandwidth Product I C= 0.5A; VCE= 5V 8 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240