KSD5090 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD5090
DESCRIPTION
- High Breakdown Voltage- : V CBO= 1500V (Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
APPLICATIONS
- Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Peak 30 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD5090
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 6A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage I C= 6A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current V CB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current V EB= 4V ; IC= 0 40 200 mA hFE-1 DC Current Gain I C= 1A ; VCE= 5V 8 hFE-2 DC Current Gain I C= 6A ; VCE= 5V 5 VECF C-E Diode Forward Voltage I F= 8A 2.0 V tf Fall Time IC= 6A , IB1= 1.2A ; IB2= -2.4A RL= 33.3Ω; VCC= 200V 0.3 μs