KSD5062 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062
DESCRIPTION
- High Breakdown Voltage- : V CBO= 1500V (Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
APPLICATIONS
- Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 16 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 5A 2.0 V tf Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω; VCC= 200V 0.4 μs isc Website：www.iscsemi.cn 2