KSD5018 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018
DESCRIPTION
- High Breakdown Voltage- : V (BR)CEO= 275V(Min)
- Built-in Resistor Between Base and Emitter
- Wide Area of Safe Operation
APPLICATIONS
- Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB B Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER Collector-Emitter Voltage IC= 1mA; RBE= 330Ω 600 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= 0.05A;Clamped 275 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 20mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA B 2.0 V ICES Collector Cutoff Current VCE= 500V 1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 1000 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 200 isc Website：www.iscsemi.cn 2