KSD5000 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD5000
DESCRIPTION
- High Breakdown Voltage- : V CBO= 1500V (Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
APPLICATIONS
- Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak 10 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD5000
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 2A; IB= 0.6A 8.0 V VBE(sat) Base-Emitter Saturation Voltage I C= 2A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current V CB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current V EB= 4V ; IC= 0 40 130 mA hFE DC Current Gain I C= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product I C= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage I F= 2.5A 2.0 V tf Fall Time IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V 0.4 μs