KSD471A SECOS | Alldatasheet
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General Purpose Transistor http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2007 Rev. A Page 1 of 2 2.54±0.1 (1.27 T yp.) 1 32 1: E mitter 2: B ase 3: C ollector 1.25±0.2 4.55±0.2 3.5±0.2 4.5±0.214.3±0.2 0.46±0.1 0.43+0.08 … 0.07 TO-92 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.8 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO V CB=30V, IE=0 0.1 μA DC current gain hFE V CE=1V, IC=100mA 70 400 Collector-emitter saturation voltage VCE(sat) I C=1A, IB=0.1A 0.5 V Base-emitter saturation voltage VBE(sat) I C=1A, IB=0.1A 1.2 V Output Capacitance Cob V CB=6V, IE=0,f=1MHZ 16 pF Transition frequency fT V CE=6V, IC=10mA 130 MHz CLASSIFICATION OF h FE Rank O Y G Range 70-140 120-240 200-400
FEATURES
z Collector Current : I C = 1A z Collector Dissipation : P C = 800mW RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2007Rev. A Page2 of2 Elektronische Bauelemente KSD471A NPN Silicon General Purpose Transistor Characteristics Curve