KSD401 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401
DESCRIPTION
- Collector-Base Breakdown Voltage- : V (BR)CBO= 200V(Min)
- Collector Current- IC= 2A
- Collector Power Dissipation- : PC= 25W@ TC= 25℃
- Complement to Type KSB546
APPLICATIONS
- Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 150 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA ; IE= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 5 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 50 μA hFE DC Current Gain IC= 0.4A; VCE= 10V 40 400 fT Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V 5 MHz hFE Classifications R O Y G 40-80 70-140 120-240 200-400 isc Website：www.iscsemi.cn 2