KSD288 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD288
DESCRIPTION
- Collector-Base Breakdown Voltage- : V (BR)CBO= 80V(Min)
- Collector Current- IC= 3A
- Collector Power Dissipation- : PC= 25W@ TC= 25℃
APPLICATIONS
- Power regulator
- Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD362
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 10mA; IB= 0 55 V V(BR)CBO Collector-Base Breakdown Voltage I C= 0.5mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E= 0.5mA; IC= 0 5 VCE(sat) Collector-Emitter Saturation Voltage I C= 1A; IB= 0.1A 1.0 V ICBO Collector Cutoff Current V CB= 50V; IE= 0 50 μA hFE DC Current Gain I C= 0.5A; VCE= 5V 40 240 hFE Classifications R O Y 40-80 70-140 120-240