KSD1691 DGNJDZ | Alldatasheet
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TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C) MAXIMUM RA TINGS (Ta=25℃ unless other wise noted) Symbol Parameter V alue Unit VCBO Coll ector-Base Voltage 60 V VCE O Collector-Emitter Voltage 60 V VEB O Emitter-Base Voltage 7 V IC Coll ector Current (DC) 5 A Collector Power Dissipation (Ta = 25 ℃) 1.3 WPC Collector Power Dissipation (Tc = 25 ℃) 20 W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55-1 T O – 126 EMITTER 2. COLLECTOR 3. BASE XX /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit D1691/g32/g39/g72/g89/g76/g70/g72/g3/g70o/g71/g72/g3 /g59/g59/g32/g38ode/g3 ORDERING INFORM ATION Part Number Package Packing Method Pack Quantity KSD1691 T O-126 Bulk KSD1691-TU T O-126 Tube D1691 60pcs/T ube 200pcs/Bag TO-126 Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
P a r a m e t e r Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CB O IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CE O IC=1mA,IB=0 60 V Emitter-base breakdown voltage V(BR )EBO IE=100μA,IC=0 7 V Collector cut-off current ICBO V CB=50V ,IE=0 10 μA Emitter cut-off current IEBO V EB=7V,IC=0 10 μA hFE(1) V CE=1V ,IC=2 A 100 400 hFE(2) V CE=1V,IC=0.1A 60DC curr ent gain hFE(3) V CE=1V ,IC=5 A 50 Collecto r-emitter saturation voltage VCE(sat ) I C=2A,IB=0 .2A 0.3 V Base-emitter saturation voltage VBE(sat) I C=2A,IB=0 .2A 1.2 V Tu rn ON Time ton 1 μS Storage Time tstg 2.5 μS Fall Ti me tf VCC = 10V, IC = 2A , IB1=-IB2=0.2 A,RL=5Ω 1 μS CLA SSIFICATION OF h FE(1) Rank O Y G Range 100-200 160-320 200-400 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified Transition frequency fT 10 MHzVCE=5V, IC=1A 2/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP Dongguan Nanjing Electronics Ltd. www.dgnjdz.com