KSD1691 TGS | Alldatasheet
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Technical content
Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 5.0 A Base Current IB 1.0 A Total Dissipation at Ptot 20 W Max. Operating Junction Temperature Tj 150 oC Storage Temperature Tstg -55~150 oC KSD1691
DESCRIPTION
Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 60V, IE = 0 — — 10 Emitter Cut-off Current IEBO VEB = 6V, IC = 0 — — 10 Collector-Emitter Sustaining Voltage VCEO IC = 1.0mA, IB = 0 60 — — V DC Current Gain hFE VCE = 1.0V, IC = 2.0A 100 — 400 Collector-Emitter Saturation Voltage VCE(sat) IC = 2.0A,IB = 0.2A — — 0.3 V Base-Emitter Voltage VBE(sat) IC = 2.0A,IB = 0.2A — — 1.2 V NPN SILICON POWER TRANSISTOR Product specification The KSD1691 is a low Vce(sat) transistor which has a large current capability and wide SOA It is suitable for DC-DC converter or driver of solenoid or motor.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O ( Ta = 25 C) O TO-126 E C B TIGER ELECTRONIC CO.,LTD