KSD1621RTF FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • High Current Driver Applications
  • Low Collector-Emitter Saturation Voltage
  • Large Current Capacity and Wide SOA
  • Fast Switching Speed
  • Complement to KSB1121 Absolute Maximum Ratings TA = 25°C unless otherwise noted Mounted on Ceramic Board (250mm2 x 0.8mm) Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Collector Power Dissipation (TA = 25°C) Derating Rate above 25°C 500 mW mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C SOT-891 1. Base 2. Collector 3. Emitter 16 21 PY W W hFE grade Year code Weekly code Marking

KSD1621 — NPN Epitaxial Silicon Transistor © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com KSD1621 Rev. B3 2 Electrical Characteristics TA = 25°C unless otherwise noted hFE Classification Package Marking and Ordering Information Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C = 10μA, IE = 0 30 V BVCEO Collector-Emitter Breakdown Voltage I C = 1mA, IB = 0 25 V BVEBO Emitter-Base Breakdown Voltage I E = 10μA, IC = 0 6 V ICBO Collector Cut-off Current V CB = 20V, IE = 0 100 nA IEBO Emitter Cut-off Current V BE = 4V, IC = 0 100 nA hFE1 hFE2 DC Current Gain V CE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A 100 560 VCE (sat) Collector-Emitter Saturation Voltage I C = 1.5A, IB = 75mA 0.18 0.4 V VBE (sat) Base-Emitter Saturation Voltage I C = 1.5A, IB = 75mA 0.85 1.2 V fT Current Gain Bandwidth product V CE = 10V, IC = 50mA 150 MHz Cob Output Capacitance V CB = 10V, IE = 0, f = 1MHz 19 pF tON Turn On Time * VCC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25Ω 60 ns tSTG Storage Time * 500 ns tF Fall Time * 25 ns Classification R S T U hFE 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Device Device Marking Package Reel Size Tape Width Quantity KSD1621RTF Line 1: 1621 Line 2: R&3 SOT-89 13” -- 4,000 KSD1621STF Line 1: 1621 Line 2: S&3 SOT-89 13” -- 4,000 KSD1621TTF Line 1: 1621 Line 2: T&3 SOT-89 13” -- 4,000 KSD1621UTF Line 1: 1621 Line 2: U&3 SOT-89 13” -- 4,000

Figure 7. Safe Operating Area Figure 8. Power Derating

KSD1621 — NPN Epitaxial Silicon Transistor © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com KSD1621 Rev. B3 5 Mechanical Dimensions 0.40 ±0.10 2.50 ±0.20 (0.50) (0.40) 4.10 ±0.20 0.40 +0.10 –0.05 0.50 ±0.10 1.65 ±0.10 C0.2 1.50 TYP 1.50 TYP (1.10) SOT-89 Dimensions in Millimeters

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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41