KSD1621_05 FAIRCHILD | Alldatasheet

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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSD1621 Rev. B2 KSD1621 NPN Epitaxial Silicon Transistor July 2005 KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications

  • Low Collector-Emitter Saturation Voltage
  • Large Current Capacity and Wide SOA
  • Fast Switching Speed
  • Complement to KSB1121 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC PC* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C = 10µA, IE = 0 30 V BVCEO Collector-Emitter Breakdown Voltage I C = 1mA, IB = 0 25 V BVEBO Emitter-Base Breakdown Voltage I E = 10µA, IC = 0 6 V ICBO Collector Cut-off Current V CB = 20V, IE = 0 100 nA IEBO Emitter Cut-off Current V BE = 4V, IC = 0 100 nA hFE1 hFE2 DC Current Gain V CE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A 100 560 VCE (sat) Collector-Emitter Saturation Voltage I C = 1.5A, IB = 75mA 0.18 0.4 V VBE (sat) Base-Emitter Saturation Voltage I C = 1.5A, IB = 75mA 0.85 1.2 V SOT-891 1. Base 2. Collector 3. Emitter 16 21 PY W W hFE grage Year code Weekly code Marking

2 www.fairchildsemi.com KSD1621 Rev. B2 KSD1621 NPN Epitaxial Silicon Transistor Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted hFE Classification Package Marking and Ordering Information Symbol Parameter Test Condition Min. Typ. Max. Units fT Current Gain Bandwidth product V CE = 10V, IC = 50mA 150 MHz Cob Output Capacitance V CB = 10V, IE = 0, f = 1MHz 19 pF tON Turn On Time * V CC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25Ω 60 ns tSTG Storage Time * 500 ns tF Fall Time * 25 ns Classification R S T U hFE 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Device Marking Device Package Reel Size Tape Width Quantity

1621 KSD1621 SOT-89 13” -- 4,000

Figure 7. Safe Operating Area Figure 8. Power Derating

5 www.fairchildsemi.com KSD1621 Rev. B2 KSD1621 NPN Epitaxial Silicon Transistor Mechanical Dimensions 0.40 ±0.10 2.50 ±0.20 (0.50) (0.40) 4.10 ±0.20 0.40 +0.10 –0.05 0.50 ±0.10 1.65 ±0.10 C0.2 1.50 TYP 1.50 TYP (1.10) SOT-89 Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 6 www.fairchildsemi.com KSD1621 Rev. B2 KSD1621 NPN Epitaxial Silicon Transistor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I16