KSD1616 FCI | Alldatasheet
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FCI . KSD1616/1616A NPN Epitaxial Silicon Transistors Semiconductor AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING 70-92 * Complement to KSD1616/1616A. (ABSOLUTE MAXIMUM RATINGS (Ta = 25 t) Collector-base Voltage :KSDIGI6 | Vozo 60 V sora | {KSDIGIGA | pe M | Collector-Emiter Voltage:KSD1616 | Vewo , IKSD1616A | \\, % M ia Emitter-base Voltage Mead } h Se Collector Current (DC) ik 2 A *Collector Current (Pulse) P, 0.75 Ww 11, Emitter 2, Base 3. Colletor Collector Dissipation TD 150 c 111. Emitter 2.Collector 3. Base Junction Temperature Y Storage Temperature Tse 755x150 | © PWs 10ms, Duty Cycle = 50% (ELECTRICAL CHARACTERISTICS(Ta=25¢) [Characteristic | Symbol | Test Condition [Min [Typ [Max | Unit | Collector Cutoff Current Toxo Ves=60V,1e=0 100 | nA Emitter Cutoff Current Tra Ves=6V,1=0 100 | nA *DC Current Gain :KSD1616 bret Vee=2V,1=100mA, 35 600 :KSD1616A BS 400 bres Vee=2V,Ie=1A 81 **Base Emitter On Voltage Vag (on) | Vee=2V,lo=50mA 600 | 640 | 700 | mv “Collector Emitter Saturation Voltage’ | Vg (sat) | I= 1Ale=S0mA 015 }03 | V *Base Emitter Saturation Voltage Vex (sat) | IC=1AJa=5omA. o9 [12 |v Output Capacitance Con Veo=10V,Ie=0,f=1MHz 19 pF Current Gain Bandwidth Product f Vee=2V,Je=100mA 100 | 160 MHz | Tum On Time ton Vee=10V,le=100mA, 0.07 ws | Storage Time ts Ipl= -Iy2=10mA 0.95 aS Fall Time a Ves(ofi)= -2--3V [0.07 nS © Pulse Test:PWs 350u 5, Duty Cycles 2% (hrs(1) CLASSIFICATION [Classification [ys | GT) (FEC) 135-270 8-1
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