KS05E4 SECOS | Alldatasheet
Document overview
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Technical content
Integrated ESD Protection Array 08-Apr-2014 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B L F HC JD G K A E /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The KS05E4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction byElectroStatic Discharges (ESD). Therefore, the KS05E4 incorporates four pairs of ultra-low capacity rail-to-rail diodes plus an additional Zener diode to provide protection to downstream signal and supply components from Electrostatic Discharge (ESD) voltages as high as Due to the rail-to-rail diodes being connected to the Zener diode, the protection is working independent from the availability of a supply voltage. The KS05E4 is fabricated using thin film-on-silicon technology and integrates 4 ultra-low capacity rail-to-rail ESD protection diodes in a miniature SOT-26 package
APPLICATIONS
/circle6 Digital Cameras /circle6 Portable Instrumentation /circle6 Notebooks, Desktops, and Serves /circle6 Personal Digital Assistants (PDAs) /circle6 Cell phone handsets and accessories
FEATURES
/circle6 low clamping voltage /circle6 Low leakage current /circle6 Small package /circle6 SOT-26 package /circle6 ESD IEC 6100-4-2 Level 4, ±8 kV Contact Discharge Compliant Protection MARKING
PACKAGE INFORMATION
/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.30 0.50 Top View
Integrated ESD Protection Array 08-Apr-2014 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Rating Symbol Value Unit Air ±14 IEC 61000-4-2 (ESD) Contact VESD kV Peak pulse current (tp=8/20us) V DD -GND I PP 6 A Peak pulse power (tp=8/20us) PPK 100 W Operating Temperature Range TJ -40~85 ° C Storage temperature range TSTG -55 ~ 125 ° C Lead temperature TL 260 ° C
ELECTRICAL CHARACTERISTICS
(T A=25 °C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Units DC Input Voltage Range V I/O - - 5.5 V Zener Diode Breakdown Voltage, Pin 5 to 2 V BRI/O I=1mA 6 - 9 V Forward Voltage V F - 0.7 - V Diode Reverse Leakage Current, Pins 1,3,4,6 to Ground I Ikg V RWM =3V - - 100 nA Pin Capacitance to Ground, Pins 1,3,4,6 C I/O Vdc=0V, f=1MHz Pin 5=3V - 1.8 - pF Zener Diode Capacitance to Ground, Pin 5 to 2 C ZENER Vdc=0V, f=1MHz Pin 5=3V - 36 - pF IPP =1A, tp=8/20us - - 8 V IPP =4A, tp=8/20us - - 8.5 V Clamping Voltage, VDD -GND V C IPP =9A, tp=8/20us - - 12 V
Integrated ESD Protection Array 08-Apr-2014 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Applications Information Universal Serial Bus 2.0 Protection The KS05E4 is optimized to protect e.g. two USB 2.0 ports of Electro-Static-Discharge (ESD). Each device is capable of protection both USB data lines and the VBUS supply. A typical application is shown in the schematic below.