KS03LL4 SECOS | Alldatasheet
Document overview
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Technical content
20W, 3V Ultra Low Capacitance ESD Protection for High-Speed Interfaces Elektronische Bauelemente 18-May-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre
DESCRIPTION
The device is designed to protect voltage sensitive electronic components from ESD and other transients. Its excellent clamping capability, low leakage, low capacitance and, fast response time provide the highest class protection on designs exposed to ESD. The combination of small size, low capacitance and, high level ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM and, MDDI interfaces. The device is designed to replace multiplayer varistors (MLV) in consumers’ equipments such as mobile phone, notebook, PAD, STB, LCD TV etc.
APPLICATIONS
/circle6 Audio and video equipment /circle6 Portable devices /circle6 Computers and peripherals /circle6 Cellular handsets and accessories
FEATURES
/circle6 Uni-directional ESD protection of four lines /circle6 Low leakage current /circle6 Low reverse clamping voltage /circle6 Fast response time MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Rating Symbol Value Unit IEC 61000-4-2 ESD Voltage 1 Air model VESD kV Contact model ±8 JESD22-A114-B ESD Voltage 1 Per human body model ±15 ESD Voltage 1 Machine model ±0.4 Peak Pulsed Power 2 PPK 20 W Peak Pulsed Current 2 IPP 2.5 A Maximum Lead temperature@ 10-second duration T L 260 ° C Junction and Storage Temperature Range T J, T STG 150, -55 ~ 150 ° C Notes: 1. The device is stressed with 10 non-repetitive ESD pulses at per channel (I/O to GND). 2. According to IEC61000-4-5, the waveform of 8/20 µs non-repetitive current pulse decays by exponents. SOT-553 EF J B C D G A H REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.20 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05
20W, 3V Ultra Low Capacitance ESD Protection for High-Speed Interfaces Elektronische Bauelemente 18-May-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Reverse Working Voltage V RWM - - 3 V Reverse Leakage Current I R V RWM =3V - - 1 µA Reverse Breakdown Voltage V BR I T=1mA 5.3 - 5.9 V Forward Voltage V F I F=10mA - - 0.9 V Clamping Voltage 1 V C I PP =2.5A - - 8 V Junction Capacitance C J V R =0, f=1MHz - 9 - pF Notes: 1. According to IEC61000-4-5, the waveform of 8/20 µs non-repetitive current pulse decays by exponents. ESD STANDARDS COMPLIANCE
20W, 3V Ultra Low Capacitance ESD Protection for High-Speed Interfaces Elektronische Bauelemente 18-May-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVES