KQS4900 KEXIN | Alldatasheet
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1.3 A, 60 V RDS(ON) =0 . 5 5@V GS =1 0V RDS(ON) =0 . 6 5@V GS =5V P-Channel -0.3 A, -300V RDS(ON) =1 5 . 5@V GS =- 10V RDS(ON) =1 6 @V GS =-5V Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC) Fast switching Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage V DSS 60 -300 V Gate to Source Voltage V GS V Drain Current Continuous Ta = 25 1.3 -0.3 Ta = 70 0.82 -0.19 Drain Current Pulsed *1 I DM 5.2 -1.2 A Peak Diode Recovery dv/dt d v/dt 74 . 5 V / n s Power Dissipation for Single Operation Ta = 25 Ta = 70 Operating and Storage Temperature T J,T STG Thermal Resistance Junction to Ambient R JA /W *1Repetitive Rating : Pulse width limited by maximum junction temperature -55 to 150 62.5 ID A PD W 1.3
www.kexin.com.cn2 SMD Type ICSMD Type Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS =0V ,I D = 250 A N-Ch 60 VGS =0V ,I D = -250 A P-Ch -300 VDS = 60V, VGS =0V 1 VDS =4 8V ,TC =5 5 10 VDS = -300 V, VGS =0V - 1 VDS = -240 V, TC =5 5 -10 VGS = 20V, VDS =0V N-Ch 100 VGS = 20 V, VDS =0V P-Ch 100 VDS =4 V ,ID = 20mA N-Ch 1.0 1.95 VDS =4 V ,ID = -20mA P-Ch -1.0 -1.95 VGS =1 0V ,ID =0.65A 0.39 0.55 VGS =5V ,I D = 0.65A 0.46 0.65 VGS =- 1 0V ,ID =-0.15 A 11.2 15.5 VGS =- 5V ,ID =-0.15 A 11.4 16 VDS = 10V, ID = 0.65A N-Ch 1.7 VDS = -10V, ID = -0.15A P-Ch 0.6 N-Channel N-Ch 5.7 21 VDD =3 0V ,ID =1 . 3A , RG=25 * P-Ch 10 30 N-Ch 21 50 P-Ch 25 60 P-Channel N-Ch 11 32 VDD = -150 V, ID =- 0 . 3A , RG=25 * P-Ch 35 80 N-Ch 17 45 P-Ch 47 105 N-Channel N-Ch 1.6 2.1 VDS =48V,ID=1.3A,VGS=5V * P-Ch 3.6 4.7 N-Ch 0.28 P-Channel P-Ch 0.42 VDS=-240V,ID=-30.3A,VGS=-5V * N-Ch 0.82 P-Ch 2.1 N-Ch 1.3 P-Ch -0.3 VGS =0V ,I S = 1.3A N-Ch 1.5 VGS =0V ,I S = -0.3A P-Ch -4.0 * Pulse Test : Pulse width 300 s, Duty cycle 2% A V Testconditons ns ns nC nC ns ns S nC P-Ch V A nA V A VSDDrain-Source Diode Forward Voltage QgdGate-Drain Charge IS Maximum Continuous Drain-Source Diode Forward Current QgTotal Gate Charge Gate-Source Charge Q gs td(off)Turn-Off Delay Time tfTurn-Off Fall Time td(on)Turn-On Delay Time trTurn-On Rise Time gFSForward Transconductance RDS(on)Static Drain-Source On-Resistance VGS(th)Gate Threshold Voltage N-Ch BVDSSDrain-Source Breakdown Voltage Gate-Body Leakage I GSS RDS(on)Static Drain-Source On-Resistance IDSSZero Gate Voltage Drain Current N-Ch P-Ch KQS4900 IC