KQD1P50 KEXIN | Alldatasheet
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Technical content
Features
-1.2A, -500V, RDS(on) = 10.5 @VGS =- 1 0V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS -500 V Drain Current Continuous (TC=25 ) -1.2 A Drain Current Continuous (TC=100 ) -0.76 A Drain Current Pulsed *1 I DM -4.8 A Gate-Source Voltage V GSS 30 V Single Pulsed Avalanche Energy*2 E AS 110 mJ Avalanche Current *1 I AR -1.2 A Repetitive Avalanche Energy *1 E AR 3.8 mJ Peak Diode Recovery dv/dt *3 d v/dt -4.5 V/ns Power dissipation @ TA=25 PD 2.5 W Power dissipation @ TC=25 38 W Derate above 25 0.3 W/ Operating and Storage Temperature T J,T STG -55 to150 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds TL 300 Thermal Resistance Junction to Case R JC 3.29 /W Thermal Resistance Junction to Ambient *4 R JA 50 /W Thermal Resistance Junction to Ambient R JA 110 /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=138mH,IAS=-1.2A,VDD=-50V,RG=25 ,Startion TJ=25 *3 ISD -1.5A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) ID PD
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D = -250 A -400 V Breakdown Voltage Temperature Coefficient ID =- 2 5 0A, Referenced to 25 mV/ VDS = -500 V, VGS =0V - 1 A VDS = -400 V, TC=125 -10 A Gate-Body Leakage Current,Forward I GSSF VGS =- 3 0V ,VDS =0V -100 nA Gate-Body Leakage Current,Reverse I GSSR VGS =30 V, VDS =0V 100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D =- 2 5 0A -3.0 -5.0 V Static Drain-Source On-Resistance R DS(on) VGS =- 1 0V ,ID = -0.6A 8.0 10.5 Forward Transconductance g FS VDS =- 5 0V ,ID =-0.6A * 1.12 S Input Capacitance C iss 270 230 pF Output Capacitance C oss 40 50 pF Reverse Transfer Capacitance C rss 6.0 8.0 pF Turn-On Delay Time t d(on) 9.0 30 ns Turn-On Rise Time tr 25 60 ns Turn-Off Delay Time t d(off) 27 65 ns Turn-Off Fall Time t f 30 70 ns Total Gate Charge Q g 11 14 nC Gate-Source Charge Q gs 2.0 nC Gate-Drain Charge Q gd 5.6 nC Maximum Continuous Drain-Source Diode Forwrad Current IS -1.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM -4.8 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S =-1.2 A -5.0 V Diode Reverse Recovery Time t rr 200 ns Diode Reverse Recovery Current Q rr 0.7 C * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% VGS =0V , dIF/dt = 100 A/ s,IS=-1.5A* IDSSZero Gate Voltage Drain Current VDS = -400 V, ID =- 1 . 5 A , VGS =- 1 0V* VDD = -250 V, ID = -1.5A,RG=25 * VDS =- 2 5V ,VGS =0V , f=1 . 0M H z KQD1P50