KQB12P20 KEXIN | Alldatasheet
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Features
-11.5A, -200V, RDS(on) =0 . 4 7@VGS =- 1 0V Low gate charge ( typical 31 nC) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS -200 V Drain Current Continuous TC=25 -11.5 A Drain Current Continuous TC=100 -7.27 A Drain Current - Pulsed (Note 1) I DM -46 A Gate-Source Voltage V GSS 30 V Single Pulsed Avalanche Energy (Note 2) E AS 810 mJ Avalanche Current (Note 1) I AR -11.5 A Repetitive Avalanche Energy (Note 1) E AR 12 mJ Peak Diode Recovery dv/dt (Note 3) d v/dt -5.5 V/ns Power dissipation @ Ta=25 3.13 W Power dissipation @ Tc=25 120 W Derate above 25 0.96 W/ Operating and Storage Temperature Range T J,T STG - 5 5t o1 5 0 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds TL 300 Thermal Resistance Junction to Case R JC 1.04 /W Thermal Resistance Junction to Ambient * R JA 40 /W Thermal Resistance Junction to Ambient R JA 62.5 /W * When mounted on the minimum pad size recommended (PCB Mount) ID PD
www.kexin.com.cn2 SMD Type ICSMD Type Transistors KQB12P20 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D =- 2 5 0A -200 V Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25 V/ VDS =- 2 0 0V ,VGS =0V - 1 A VDS = -160V, TC=125 -10 A Gate-Body Leakage, Forward I GSSF VGS =- 3 0V ,VDS =0V - 1 0 0 n A Gate-Body Leakage, Reverse I GSSR VGS =3 0 V ,VDS = 0 V 100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D = -250 A -3.0 -5.0 V Static Drain-Source On-Resistance R DS(on) VGS =- 1 0V ,ID = -5.75A 0.36 0.47 Forward Transconductance g FS VDS =- 4 0V ,ID =- 5 . 7 5 A 6 . 4 S Input Capacitance C iss 920 1200 pF Output Capacitance C oss 190 250 pF Reverse Transfer Capacitance C rss 30 40 pF Turn-On Delay Time t d(on) 20 50 ns Turn-On Rise Time tr 195 400 ns Turn-Off Delay Time t d(off) 40 90 ns Turn-Off Fall Time t f 60 130 ns Total Gate Charge Q g 31 40 nC Gate-Source Charge Q gs 8.1 nC Gate-Drain Charge Q gd 16 nC Maximum Continuous Drain-Source Diode Forward Current IS -11.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM -46 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = -11.5 A -5.0 V Reverse Recovery Time t rr VGS =0V ,I S =- 1 1 . 5A , 1 8 0 n s Reverse Recovery Charge Q rr dIF /d t =1 0 0A /s( N o t e 4 ) 1.44 c Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2mH, IAS =- 1 1 . 5 A ,VDD =- 5 0 V ,RG =2 5 ,S t a r t i n gTJ =2 5 3. ISD -11.5A, di/dt 300A/ s, VDD BVDSS,S t a r t i n gTJ =2 5 4. Pulse Test : Pulse width300 s, Duty cycle 2% 5. Essentially independent of operating temperature Zero Gate Voltage Drain Current VDS =- 1 6 0V ,ID =- 1 1 . 5A , VGS =- 1 0 V(Note4,5) VDD = -100V, ID = -11.5 A,RG =2 5 (Note4,5) VDS =- 2 5V ,VGS =0V , f=1 . 0M H z IDSS