KPS8N65D KEC | Alldatasheet

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  1. 9. 30 1/6 SEMICONDUCTOR TECHNICAL DATA KPS8N65D N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES

hVDSS=650V, ID=8A hDrain-Source ON Resistance : RDS(ON)(Max)=0.58ʃ @VGS=10V hQg(typ.)= 20nC MAXIMUM RATING (Tc=25) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBO L RATING UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ‚30 V Drain Current @TC=25 ID A@TC=100 5* Pulsed (Note1) IDP 18* Single Pulsed Avalanche Energy (Note 2) EAS 50 mJ Repetitive Avalanche Energy (Note 1) EAR 2.3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 PD 73.5 W Derate above 25 0.59 W/ Maximum Junction Temperature Tj 150  Storage Temperature Range Tstg -55q150  Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.7 /W Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W G D S PIN CONNECTION DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M

0.96 MAX

0.90 MAX

E E M N H

0.70 MIN

O 0.1 MAX N 123 6.60 0.20+_ 6.10 0.20+_ 5.34 0.30+_ 0.70 0.20+_ 2.70 0.15+_ 2.30 0.10+_ 1.80 0.20+_ 0.50 0.10+_ 2.30 0.10+_ 0.50 0.10+_ J O 1. GATE 2. DRAIN 3. SOURCE

  1. 9. 30 2/6 KPS8N65D Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250ǺA, VGS=0V 650 - - V Breakdown Voltage Temperature Coefficient ǚBVDSS/ǚTj ID=250ǺA, Referenced to 25 - 0.6 - V/ Drain Cut-off Current IDSS VDS=650V, VGS=0V - - 10 ɵ Gate Threshold Voltage Vth VDS=VGS, ID=250ǺA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=‚30V, VDS=0V - - ‚100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4A - 0.50 0.58 ʃ Dynamic Total Gate Charge Qg VDS=520V, ID=8A VGS=10V (Note 5) - 20 - nCGate-Source Charge Qgs - 2.8 - Gate-Drain Charge Qgd - 13 - Turn-on Delay time td(on) VDD=325V ID=8A RG=25ʃ (Note4,5) - 17 - ns Turn-on Rise time tr - 40 - Turn-off Delay time td(off) - 60 - Turn-off Fall time tf - 22 - Input Capacitance Ciss VDS=40V, VGS=0V, f=1.0MHz - 500 - pFOutput Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 8 A Pulsed Source Current ISP - - 32 Diode Forward Voltage VSD IS=8A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=8A, VGS=0V, dIs/dt=100A/Ǻs - 280 - ns Reverse Recovery Charge Qrr - 2.1 - ǺC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =23.5mH, IS=2A, VDD=50V, RG=25ʃ, Starting Tj=25. Note 3) IS†8A, dI/dt†100A/ɫ, VDD†BVDSS, Starting Tj=25. Note 4) Pulse Test : Pulse width † 10ɫ, Duty Cycle † 2%. Note 5) Essentially independent of operating temperature. 001 KPS8N65 D PRODUCT NAME LOT NO Marking
  1. 9. 30 3/6 KPS8N65D Revision No : 0 Normalized Breakdown Voltage BVDSS Gate - Source Voltage VGS (V) Fig1. ID - VDS Drain - Source Voltage VDS (V) Drain Current ID (A) 100 10-1 101 6841 002 Fig2. ID - VGS Fig3. BVDSS - Tj Fig4. RDS(ON) - ID 05 0 25 0.9 1.0 1.3 1.2 1.1 75 100 125 150 Drain Current ID (A) Drain Current ID (A)On - Resistance RDS(ON) (Ω) Fig5. IS - VSD Reverse Drain Current IS (A) 1.2 0.8 0.6 0.4 0.2 1.0 04 21 0 68 Junction Temperature Tj ( )C Source - Drain Voltage VSD (V) 100 10-1 101 102 Fig6. RDS(ON) - Tj Junction Temperature Tj ( ) 0 50-100 -50 100 150 Normalized On Resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 C VGS =10V IDS = 4A VGS = 0V IDS = 250

100 C 25 C

VGS=7,10V VDS=20V VGS=5V 100 C 25 C VGS=7V VGS=10V 100 10210-1 101 10-1 100 101 102

  1. 9. 30 4/6 KPS8N65D Revision No : 0 Drain Current ID (A) Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 242041 2 1 6 80 Fig8. Qg- VGS Fig9. Safe Operation Area Gate - Source Voltage VGS (V) 101 102 102 101 103 104 101 10-1 100 10010-2 102 103 ID=8A VDS = 520V Fig 7. C - VDS Drain - Source Voltage VDS (V) Capacitance (pF) 0 1 02 03 04 0 Crss Coss Ciss 10ט DC 10י 100ט Tc= 25 Tj = 150 Single pulse C C Operation in this area is limited by RDS(ON) TIME (sec) Fig10. Transient Thermal Response Curve Transient Thermal Resistance ( C/W)10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 101 Duty=0.5 Single Pulse PDM - Duty Factor, D= t1/t2 - Rth(j-c) = 1.7 C/W Max. 0.05 0.02 0.01 0.1 0.2
  1. 9. 30 5/6 KPS8N65D Revision No : 0 Fig11. Gate Charge ID ID VDS VGS VGS VDS VGS 1.0 mA Fast Recovery Diode 10V 10 V 25 Ω RL Qg QgdQgs Q tp Fig13. Resistive Load Switching Fig12. Single Pulsed Avalanche Energy VDS(t) ID(t)VDS VGS10 V 25Ω L Time EAS= LIAS2 BVDSS - VDD BVDSS1 VDD IAS BVDSS VDS VGS tr td(off) toff td(on) ton tf 10% 90% 50V

0.8 VDSS

0.5 VDSS

  1. 9. 30 6/6 KPS8N65D Revision No : 0 Fig14. Source - Drain Diode Reverse Recovery and dv /dt IF IS VDS VSD ISD (DUT) VDS (DUT) VGS10V driver DUT Body Diode Recovery dv/dt Body Diode Forword Voltage drop Body Diode Forword Current Body Diode Reverse Current di/dt VDD IRM