KPS11N60D KEC | Alldatasheet

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2014 .11. 05 1/6 SEMICONDUCTOR TECHNICAL DATA KPS11N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 1 General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES

hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 23nC MAXIMUM RATING (Tc=25) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBO L RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ‚30 V Drain Current @TC=25 ID 11* A@TC=100 6.9* Pulsed (Note1) IDP 24* Single Pulsed Avalanche Energy (Note 2) EAS 150 mJ Repetitive Avalanche Energy (Note 1) EAR 4.0 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 PD 73.5 W Derate above 25 0.59 W/ Maximum Junction Temperature Tj 150  Storage Temperature Range Tstg -55q150  Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.7 /W Thermal Resistance, Junction-to-Ambient RthJA 110 /W G D S PIN CONNECTION DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M

0.96 MAX

0.90 MAX

E E M N H

0.70 MIN

O 0.1 MAX N 123 6.60 0.20+_ 6.10 0.20+_ 5.34 0.30+_ 0.70 0.20+_ 2.70 0.15+_ 2.30 0.10+_ 1.80 0.20+_ 0.50 0.10+_ 2.30 0.10+_ 0.50 0.10+_ J O 1. GATE 2. DRAIN 3. SOURCE

2014 .11. 05 2/6 KPS11N60D Revision No : 1 ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250ǺA, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient ǚBVDSS/ǚTj ID=250ǺA, Referenced to 25 - 0.6 - V/ Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 ǺA Gate Threshold Voltage Vth VDS=VGS, ID=250ǺA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=‚30V, VDS=0V - - ‚100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5.5A - 0.33 0.38 ʃ Dynamic Total Gate Charge Qg VDS=480V, ID=11A VGS=10V (Note 5) - 23 - nCGate-Source Charge Qgs - 4.0 - Gate-Drain Charge Qgd - 13 - Turn-on Delay time td(on) VDD=300V ID=11A RG=25ʃ (Note4,5) - 25 - ns Turn-on Rise time tr - 35 - Turn-off Delay time td(off) - 70 - Turn-off Fall time tf - 25 - Input Capacitance Ciss VDS=40V, VGS=0V, f=1.0MHz - 605 - pFOutput Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 3.0 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 11 A Pulsed Source Current ISP - - 44 Diode Forward Voltage VSD IS=11A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=11A, VGS=0V, dIs/dt=100A/Ǻs - 280 - ns Reverse Recovery Charge Qrr - 3.0 - ǺC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =37.1mH, IS=2.75A, VDD=50V, RG=25ʃ, Starting Tj=25. Note 3) IS†11A, dI/dt†100A/ɫ, VDD†BVDSS, Starting Tj=25. Note 4) Pulse Test : Pulse width † 10ɫ, Duty Cycle † 2%. Note 5) Essentially independent of operating temperature. PRODUCT NAME LOT NO 001 2 KPS11N60 D Marking

2014 .11. 05 3/6 KPS11N60D Revision No : 1 Gate - Source Voltage VGS (V) Drain Current ID (A) 100 10-1 101 6841 02 Fig2. ID - VGS Fig4. RDS(ON) - ID Drain Current ID (A)On - Resistance RDS(ON) (Ω) Fig5. IS - VSD Reverse Drain Current IS (A) 1.2 0.8 0.6 0.4 0.2 1.0 05 2 0 10 15 Source - Drain Voltage VSD (V) 100 10-1 101 102 Fig6. RDS(ON) - Tj Junction Temperature Tj ( ) 0 50-100 -50 100 150 Normalized On Resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 C VGS =10V IDS = 5.5A

100 C 25 C

VGS=7V VGS=10V VDS=20V 100 C 25 C Normalized Breakdown Voltage BVDSS Fig1. ID - VDS Drain - Source Voltage VDS (V) Fig3. BVDSS - Tj 05 0 25 0.9 1.0 1.3 1.2 1.1 75 100 125 150 Drain Current ID (A) Junction Temperature Tj ( )C VGS = 0V IDS = 250 VGS=7,10V VGS=5V 100 10210-1 101 10-1 101

2014 .11. 05 4/6 KPS11N60D Revision No : 1 Drain Current ID (A) Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 242041 2 1 680 Fig8. Qg- VGS Fig9. Safe Operation Area Gate - Source Voltage VGS (V) 101 102 102 101 103 104 101 10-1 100 10010-2 102 103 ID=11A VDS = 480V Fig 7. C - VDS Drain - Source Voltage VDS (V) Capacitance (pF) 0 1 02 03 04 0 Crss Coss Ciss TIME (sec) Fig10. Transient Thermal Response Curve Transient Thermal Resistance ( C/W)10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 101 Duty=0.5 Single Pulse 0.05 0.02 0.2 0.01 PDM - Duty Factor, D= t1/t2 - Rth(j-c) = 1.7 C/W Max. 100ט 10ט 10י DC Operation in this area is limited by RDS(ON) Tc= 25 Tj = 150 Single pulse C C 0.1

Fig11. Gate Charge ID ID VDS VGS VGS VDS VGS 1.0 mA Fast Recovery Diode 10V 10 V 25 Ω RL Qg QgdQgs Q tp Fig13. Resistive Load Switching Fig12. Single Pulsed Avalanche Energy VDS(t) ID(t)VDS VGS10 V 25Ω L Time EAS= LIAS2 BVDSS - VDD BVDSS1 VDD IAS BVDSS VDS VGS tr td(off) toff td(on) ton tf 10% 90% 50V

0.8 VDSS

0.5 VDSS

2014 .11. 05 5/6 KPS11N60D Revision No : 1

2014 .11. 05 6/6 KPS11N60D Revision No : 1 Fig14. Source - Drain Diode Reverse Recovery and dv /dt IF IS VDS VSD ISD (DUT) VDS (DUT) VGS10V driver DUT Body Diode Recovery dv/dt Body Diode Forword Voltage drop Body Diode Forword Current Body Diode Reverse Current di/dt VDD IRM