KPCF8402 KEXIN | Alldatasheet

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Low drain-source ON resistance : P Channel RDS (ON)=6 0m (typ.) N Channel RDS (ON)=3 8m (typ.) High forward transfer admittance : P Channel |Yfs|=5 . 9S( t y p . ) N Channel |Yfs|=6 . 8S( t y p . ) Low leakage current : P Channel IDSS =- 1 0 A( VDS =- 3 0V ) N Channel IDSS =1 0 A( VDS =3 0V ) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS =- 1 0V ,ID =- 1 m A ) N Channel Vth = 1.3 to 2.5 V (VDS =1 0V ,ID =1 m A ) Absolute Maximum Ratings Ta = 25 Symbol P-Channel N-Channel Unit VDSS -30 30 V VDGR -30 30 V VGSS 20 20 V DC (Note 1) I D -3.2 4 A Pulse (Note 1) I DP -12.8 16 A Single-device operation (Note 3a) PD( 1 ) 1.35 1.35 Single-device value at dual operation(Note 3b) PD( 2 ) 1.12 1.12 Single-device operation (Note 3a) PD( 1 ) 0.53 0.53 Single-device value at dual operation(Note 3b) PD( 2 ) 0.33 0.33 Single pulse avalanche energy(Note 4) E AS 0.67 2.6 mJ IAR -1.6 2 A EAR mJ Tch Storage temperature range T stg Single-device operation (Note 3a) Rth (ch-a) (1) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) Single-device operation (Note 3a) Rth (ch-a) (1) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) Thermal resistance,channel to ambient (t = 5 s) (Note 2a) Thermal resistance,channel to ambient (t = 5 s) (Note 2b) 235.8 378.8 - 5 5t o1 5 0 W 92.6 Drain current Drain power dissipation (t = 5s ) Drain power dissipation (t = 5 s) (Note 2b) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature 111.6 0.11 150 Parameter Drain-source voltage Drain-gate voltage (RGS =2 0k ) Gate-source voltage

www.kexin.com.cn2 SMD Type ICSMD Type IC KPCF8402 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS = 16 V, VDS =0V P-Ch 10 A VGS = 16 V, VDS =0V N-Ch 10 A VDS =? 3 0V ,VGS =0V P - C h - 1 0 A VDS =3 0V ,VGS =0V N - C h 1 0 A V (BR) DSS ID =- 1 0m A ,VGS =0V - 3 0 V V (BR) DSX ID =- 1 0m A ,VGS =2 0V - 1 5 V V (BR) DSS ID =10 mA, VGS =0V 3 0 V V (BR) DSX ID =1 0m A ,VGS =- 2 0V 1 5 V VDS =- 1 0V ,ID = -1 mA P-Ch -0.8 -2.0 V VDS =1 0V ,ID =1m A N - C h 1 . 3 2 . 5 V VGS =- 4 . 5V ,ID = -1.6A 80 105 VGS =- 1 0V ,ID = -1.6 A 60 72 VGS =4 . 5V ,ID =2 . 0 A 5 8 7 7 VGS =1 0V ,ID =2 . 0A 3 8 5 0 VDS =- 1 0V ,ID =- 1 . 6A P - C h 2 . 9 5 . 9 S VDS =1 0V ,ID = 2.0 A N-Ch 3.4 6.8 S Input capacitance C iss 600 Reverse transfer capacitance C rss 60 Output capacitance C oss 70 Input capacitance C iss 470 Reverse transfer capacitance C rss 60 Output capacitance C oss 80 Switching time Rise time t r 5.3 Switching time Turn-on time t on 12 Switching time Fall time t f 8.4 Switching time Turn-off time t off 34 Switching time Rise time t r 5.2 Switching time Turn-on time t on 8.3 Switching time Fall time t f 4.0 Switching time Turn-off time t off 22 Total gate charge (gate-source plus gate-drain) Qg 14 Gate-source charge 1 Q gs1 1.4 Gate-drain (Gate-source charge "miller") charge Qgd 2.7 m pF ns nC RDS (ON)Drain-source ON resistance Drain-source breakdown voltage Testconditons P-Ch N-Ch P-Ch nsN-Ch P-ChVDD=-24V,VGS=-10V,ID=-3.2A IGSSGate leakage current IDSSDrain cut-off current Drain-source breakdown voltage VthGate threshold voltage RDS (ON)Drain-source ON resistance |Yfs|Forward transfer admittance VDS =1 0V ,VGS =0V ,f=1M H z m pF VDS =- 1 0V ,VGS =0V ,f=1M H z N-Ch P-Ch N-Ch P-Ch

www.kexin.com.cn 3 SMD Type ICSMD Type IC KPCF8402 Circuit Configuration Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Total gate charge (gate-source plus gate-drain) Qg 10 Gate-source charge 1 Q gs1 1.7 Gate-drain ("miller") charge Q gd 2.4 -12.8 A 16 A IDR =-3.2 A, VGS =0V 1 . 2 V IDR =4.0 A, VGS =0V - 1 . 2 V Testconditons N-Ch nC IDRP N-Ch P-ChDrain reverse current Pulse (Note 1) VDSFForward voltage (diode) VDD=24V,VGS=10V,ID=6A