KPA2790GR KEXIN | Alldatasheet

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N-channel R DS(on)1 =2 8m MAX. (VGS =1 0V ,ID =3A ) RDS(on)2 =4 0m MAX. (VGS =4 . 5V ,ID =3A ) P-channel R DS(on)1 =6 0m MAX. (VGS =- 1 0V ,ID =- 3A ) RDS(on)2 =8 0m MAX. (VGS =- 4 . 5V ,ID =- 3A ) Low input capacitance N-channel C iss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage (VGS =0V ) V DSS 30 -30 V Gate to Source Voltage (VDS =0V ) V GSS 20 20 V Drain Current (DC) I D(DC) 6 6 A Drain Current (pulse) *1 I D(pulse) 24 24 A Total Power Dissipation (1 unit) *2 P T W Total Power Dissipation (2 units) *2 P T W Channel Temperature T ch Storage Temperature T stg Single Avalanche Current *3 I AS 6- 6 A Single Avalanche Energy *3 E AS 3.6 3.6 mJ *1 PW 10 s, Duty Cycle 1% *2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm *3 Starting Tch = 25 ,V DD =1/2 X VDSS,R G =2 5 ,L=1 0 0 H, VGS =V GSS 0V 1.7 150 - 5 5t o+ 1 5 0

www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VDS =3 0V ,VGS =0V N - C h 1 0 VDS =- 3 0V ,VGS =0V P -C h - 1 0 VGS = 16 V, VDS =0V N-Ch 10 VGS = 16 V, VDS =0V P- Ch 10 VDS =1 0V ,ID = 1 mA N-Ch 1.5 2.5 VDS =- 1 0V ,ID = -1 mA P- Ch -1.0 -2.5 VDS =1 0V ,ID =3A N - C h 2 VDS =- 1 0V ,ID =- 3A P -C h 2 RDS(on)1 VGS =1 0V ,ID =3A 2 1 2 8 m RDS(on)2 VGS =4 . 5V ,ID =3A 2 8 4 0 m RDS(on)3 VGS =4 . 0V ,ID =3A 3 4 5 3 m RDS(on)1 VGS =- 1 0V ,ID =- 3A 4 3 6 0 m RDS(on)2 VGS =- 4 . 5V ,ID =- 3A 5 8 8 0 m RDS(on)3 VGS =- 4 . 0V ,ID = -3 A 65 110 m N-Channel N-Ch 500 VDS =1 0V , VGS = 0 V,f = 1 MHz P- Ch 460 N-Ch 135 P- Channel P- Ch 130 V DS =- 1 0V , VGS = 0 V,f = 1 MHz N-Ch 77 P- Ch 77 N-Channel N-Ch 9.2 VDD =1 5V ,ID =3A , VGS =1 0V P- Ch 8.5 RG =1 0 N-Ch 8.8 P- Ch 4.8 P- Channel N-Ch 28 VDD =- 1 5V ,ID =- 3A , VGS =- 1 0V P- Ch 42 RG =1 0 N-Ch 7.4 P- Ch 19 N-Channel N-Ch 12.6 ID =6A , VDD =2 4V , VGS =1 0V P -C h 1 1 N-Ch 1.7 P- Channel P- Ch 1.7 I D =- 6A , VDD =- 2 4V , VGS =- 1 0V N - C h 3 . 8 P- Ch 3.3 IF =6A ,V GS =0V N - C h 0 . 8 5 IF =6A ,V GS =0V P -C h 0 . 9 2 N-Ch 18 P- Ch 21 N-Ch 11 P- Ch 12 pF pF Testconditons pF ns V nC nC nC ns ns ns ns A A V S QrrReverse Recovery Charge IF =6A ,V GS =0V , di/dt =1 0 0A /s nC VF(S-D)Body Diode Forward Voltage Note trrReverse Recovery Time QGSGate to Source Charge QGDGate to Drain Charge tf QG Fall Time Total Gate Charge Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time C rss td(on) tr td(off) IDSSZero Gate Voltage Drain Current Ciss Coss Input Capacitance Output Capacitance N-Ch P- Ch IGSSGate Leakage Current VGS(off)Gate Cut-off Voltage |y fs |Forward Transfer Admittance Drain to Source On-state Resistance KPA2790GR