KPA1716 KEXIN | Alldatasheet
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RDS(on)1 = 12.5 m TYP. (VGS =- 1 0V ,ID =- 4A ) RDS(on)2 =1 7m TYP. (VGS =- 4 . 5V ,ID =- 4A ) RDS(on)3 =1 9m TYP. (VGS = -4.01 V, ID =- 4A ) Low Ciss :C iss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage (VGS =0 ) V DSS -30 V Gate to Source Voltage (VDS =0 ) V GSS 20 V Drain Current (DC) Ta = 25 ID(DC) 8 A Drain Current (Pulse) *1 I D(pulse) 32 A Total Power DissipationTa = 25 *2 PT 2.0 W Channel Temperature T ch 150 Storage Temperature T stg - 5 5t o+1 5 0 *1 PW 10 s, Duty cycle 1% *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit RDS(on)1 VDS =- 1 0 V ,ID = -4.0 A 12.5 16 m RDS(on)2 VGS =- 4 . 5 V ,ID = -4.0 A 17 23 m RDS(on)3 VGS =- 4 . 0 V ,ID = -4.0 A 19 26 m Gate Cut-off Voltage V GS(off) VDS =- 1 0V ,ID = 1 mA -1.0 -1.6 -2.5 V Forward Transfer Admittance | y fs |V DS =1 0V ,ID =- 4 . 0 A 7 1 4 S Zero Gate Voltage Drain Current I DSS VDS =- 3 0V ,VGS =0 - 1 A Gate Leakage Current I GSS VGS = 20V, VDS =0 10 A Input Capacitance C iss 2100 pF Output Capacitance C oss 700 pF Reverse Transfer Capacitance C rss 300 pF Turn-on Delay Time t d(on) 30 ns Rise Time t r 150 ns Turn-off Delay Time t d(off) 120 ns Fall Time t f 76 ns Total Gate Charge Q G 40 nC Gate to Source Charge Q GS 6n C Gate to Drain Charge Q GD 10 nC Body Diode forward Voltage V F(S-D) IF =8 . 0A ,VGS =0 0 . 8 V Reverse Recovery Time trr I F =8 . 0A ,VGS =0V 4 5 n s Reverse Recovery Charge Qrr di/dt =1 0 0A /s 33 nC VDS =- 1 0V ,VGS =0 ,f=1M H z ID = -8.0A, VDD =- 2 4 V ,VGS =- 1 0V ID =- 4 . 0A ,VGS(on) =- 1 0V ,VDD =-15 V,RG =1 0 D r a i nt oS o u r c eO n - s t a t eR e s i s t a n c e KPA1716