KP8M7 KEXIN | Alldatasheet
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Technical content
Features
Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage V DSS 30 -30 V Gate-source voltage V GSS 20 20 V Drain current Continuous I D 5.0 7.0 A Drain current Pulsed * I DP 20 28 A Source current (Body diode) Continuous I S 1.6 -1.6 A Source current (Body diode) Pulsed * I SP 6.4 -28 A Total power dissipation P D W Channel temperature T ch Storage temperature T stg Channel to ambient R th (ch-a) /W *P w 10 s, Duty cycle 1% 150 - 5 5t o+ 1 5 0 62.5
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS= 20V,VDS=0V N-Ch 10 VGS= 20V,VDS=0V P-Ch 10 ID=1mA,VGS=0V N-Ch 30 ID=-1mA,VGS=0V P-Ch -30 VDS=30V,VGS=0V N-Ch 1 VDS=-30V,VGS=0V P-Ch -1 VDS=10V,ID=1mA N-Ch 1.0 2.5 VDS=-10V,ID=-1mA P-Ch -1.0 -2.5 ID=5.0A,VGS=10A 36 51 ID=5.0A,VGS=4.5V 52 73 ID=5.0A,VGS=4V 58 82 ID=-7A,VGS=-10A 20 28 ID=-7A,VGS=-4.5V 25 35 ID=-7A,VGS=-4.0V 30 42 ID=5.0A,VDS=10V N-Ch 3.0 ID=-7A,VDS=-10V P-Ch 6.0 N-Channel N-Ch 230 V DS=10V,VGS=0V,f=1MHz P-Ch 2600 N-Ch 80 P-Channel P-Ch 450 V DS=-10V,VGS=0V,f=1MHz N-Ch 50 P-Ch 350 ID=2.5A,VDD=15V N-Ch 6 ID=-3.5A,VDD=-15V P-Ch 20 N-Channel N-Ch 8 VGS=10V,RL=6.0 ,RG=10 P-Ch 50 N-Ch 22 P-Channel P-Ch 110 VGS=-10V,RL=4.3 ,RG=10 N-Ch 5 P-Ch 70 N-Channel N-Ch 3.9 5.5 V DD=15V,VGS=5V,ID=5.0A P-Ch 25 N-Ch 1.1 P-Channel P-Ch 5.5 V DD=-15V,VGS=-5V,ID=-7.0A N-Ch 1.4 P-Ch 10 IS=6.4A, VGS=0V N-Ch 1.2 IS=-1.6A, VGS=0V P-Ch -1.2 IDSSZero gate voltage drain current VGS (th) IGSSGate-source leakage V(BR) DSSDrain-source breakdown voltage Gate threshold voltage pF pF RDS (on) Static drain-source on-state resistance |Yfs|Forward transfer admittance CossOutput capacitance m Input capacitance td (on)Turn-on delay time trRise time Fall time QgTotal gate charge RDS (on) Static drain-source on-state resistance td (off)Turn-off delay time CrssReverse transfer capacitance Ciss VSDForward voltage Testconditons N-Ch P-Ch QgsGate-source charge QgdGate-drain charge tf m S A V A V pF ns V nC nC nC ns ns ns KP8M7