KP8M10 KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage V DSS 30 -30 V Gate-source voltage V GSS 20 20 V Drain current Continuous I D 7.0 4.5 A Drain current Pulsed * I DP 28 18 A Source current (Body diode) Continuous I S 1.6 -1.6 A Source current (Body diode) Pulsed * I SP 6.4 -18 A Total power dissipation (TC=25 ) PD W Channel temperature T ch Storage temperature T stg Channel to ambient R th (ch-a) /W *P w 10 s, Duty cycle 1% 150 - 5 5t o+ 1 5 0 62.5
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS= 20V,VDS=0V N-Ch 10 VGS= 20V,VDS=0V P-Ch 10 ID=1mA,VGS=0V N-Ch 30 ID=-1mA,VGS=0V P-Ch -30 VDS=30V,VGS=0V N-Ch 1 VDS=-30V,VGS=0V P-Ch -1 VDS=10V,ID=1mA N-Ch 1.0 2.5 VDS=-10V,ID=-1mA P-Ch -1.0 -2.5 ID=7.0A,VGS=10A 17 24 ID=7.0A,VGS=4.5V 23 33 ID=7.0A,VGS=4V 25 35 ID=-4.5A,VGS=-10A 40 56 ID=-4.5A,VGS=-4.5V 57 80 ID=-4.5A,VGS=-4.0V 65 90 ID=7.0A,VDS=10V N-Ch 5.0 ID=-4.5A,VDS=-10V P-Ch 3.5 N-Channel N-Ch 600 V DS=10V,VGS=0V,f=1MHz P-Ch 850 N-Ch 200 P-Channel P-Ch 190 V DS=-10V,VGS=0V,f=1MHz N-Ch 120 P-Ch 120 ID=3.5A,VDD=15V N-Ch 8 ID=-2.5A,VDD=-15V P-Ch 10 N-Channel N-Ch 10 VGS=10V,RL=4.29 ,RG=10 P-Ch 25 N-Ch 37 P-Channel P-Ch 60 VGS=-10V,RL=6.0 ,RG=10 N-Ch 11 P-Ch 25 N-Channel N-Ch 8.4 11.8 V DD=15V,VGS=5V,ID=7.0A P-Ch 8.5 N-Ch 1.9 P-Channel P-Ch 2.5 V DD=-15V,VGS=-5V,ID=-4.5A N-Ch 3.3 P-Ch 3.0 IS=6.4A, VGS=0V N-Ch 1.2 IS=-1.6A, VGS=0V P-Ch -1.2 IDSSZero gate voltage drain current VGS (th) IGSSGate-source leakage V(BR) DSSDrain-source breakdown voltage Gate threshold voltage pF pF RDS (on) Static drain-source on-state resistance |Yfs|Forward transfer admittance CossOutput capacitance m Input capacitance td (on)Turn-on delay time trRise time Fall time QgTotal gate charge RDS (on) Static drain-source on-state resistance td (off)Turn-off delay time CrssReverse transfer capacitance Ciss VSDForward voltage Testconditons N-Ch P-Ch QgsGate-source charge QgdGate-drain charge tf m S A V A V pF ns V nC nC nC ns ns ns KP8M10