KP110 INFINEON | Alldatasheet

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Technical content

Features

  • Ratiometric analog output
  • Programmable transfer function performed by customer
  • High accuracy over a large temperature range up to ± 1.2 kPa (10 ... 85 °C)
  • CMOS compatible surface micromachining
  • Bare die
  • Specific transfer functions programmable
  • Broken wire detection Product Description The KP110 is a miniaturized absolute pressure sensor IC based on the capacitive principle. It is surface micromachined with a monolithic integrated signal conditioning circuit realized in the state-of-the-art 0.8 µm BiCMOS technology. As the KP110 is a high precision IC for cost critical solutions. High accuracy and high sensitivity enable the dedication in automotive applications as well as consumer products. In the automotive field the manifold air pressure (MAP) and barometric air pressure (BAP) are important parameters to compute the air-fuel ratio provided to the engine and for controlling spark advance to optimize engine efficiency. Type Ordering Code Minimum Order Quantity KP110 Q62705-K432 1 Wafer KP110

(top view of die) Figure1 Pad Definitions and Functions Pad No. Symbol Function

1 SERIAL_CLK/

PROG_VOLT External clock for communication/ Programming voltage

2 DTA_IN Serial in

3 DTA_OUT Serial out

4 VCC Supply voltage

5 (GND) Alternative ground pad

6 VOUT Analog pressure signal output

7 GND 0 V circuit ground potential

The pads described in the shaded rows of the table above are used during calibration only.

  • Semiconductor material: Silicon
  • Surface passivation: Silicon-Nitride
  • Die thickness: 675 µm
  • Die dimension: 4.30 mm x 3.34 mm
  • Pad metallisation: AlSiCu
  • Size of the bondpads (area free of passivation): 200 x 200 µm
  • Rear side metallisation of the chips: no used
  • The rear side of the chip is electrical connected with GND-Pad Figure2 Functional Block Diagram

Digital Programming Interface The KP110 digital interface is a 3 wire interface consisting of Data_In, Data_Out and Clock. A write cycle needs 13 Clock cycles. With the first 12 rising edges of the Clock the signal on Data_In is clocked into a shift register. The first 3 bits are interpreted as a register address, the last 9 as data bits. The address and the data word are starting with the LSB, respectively. During the falling edges of the first 11 Clock cycles the Data_In must be low. The falling edge of the 12th Clock cycle enables the write frame, at this time Data_In must be high. A 13th Clock cycle is needed for internal purposes, the signal at Data_In is ignored. Simultaneously to the write cycle, a read cycle at Data_Out is performed. The signal at Data_Out is structured the same way as at Data_In, i.e. 3 address bits and 9 data bits. The selected register for reading depends on the content of the TESTREG register. The first valid bit at Data_Out appears with the 13th rising edge of the Clock of the previous write frame. The following figure shows the timing diagram: Figure3 Timing Diagram

The table below shows the internal registers of the KP110. For the shaded registers PROM cells exist. The PROM cells are used for permanent programming of the calibration data. In addition to the registers in the table below a 12 x 9 bit RAM table exists for the linearization and definition of the analog pressure signal. This RAM table is also overlayed by PROM cells. To write a 9 bit word to the RAM table at first the data content must be written into the MEMDAT register. In a further write cycle the desired word is addressed by the 4 LSBs of the MEMCTL register. Nonvolatile Memory Each PROM cell consists of a thin polysilicon wire located in a small evacuated cavity. The cells are called HR-fuses. In order to write a logic "1" to a HR-cell the wire has to be cut with a current pulse. Since the current can reach up to 100 mA only a single HR-fuse can be programmed at a time. The desired bit within a HR-fuse register is addressed by a register called FUSE_NR. In case of the linearization table the desired PROM register itself is addressed by the MEMCTL-register. In order to program the GLOBOFF, TGAIN, TOFFL and TOFFQ register the MODREG-register is used for addressing. After the correct addressing of PROM register and bit a fuse pulse has to be applied to pad 1. The requirements for the pulse voltage, length and slew rate are given in the electrical characteristics. The exact sequences for RAM/PROM reading/writing are available on request. Register Function MEMDAT Data bit 0 to 9 MEMCTL Selection of register of linearization table GLOBOFF Global offset compensation FUSE_NR Fuse number TESTREG Selection of register for read cycle TGAIN Temperature gain compensation (linear and square) TOFFL Linear temperature offset compensation TOFFQ Square temperature offset compensation MODEREG Selection of registers for programming of PROM The shaded registers in the table are overlayed with PROM

The GLOBOFF register is needed to adjust the sensor cell to the internal A/D converter range. The TGAIN, TOFFL and TOFFQ registers are used for the temperature compensation. These registers together with the linearization table have to be programmed to achieve the full sensor performance. For a proper calibration of the compensation registers and the linearization table it is proposed to measure the sensor at a minimum of two different temperatures (e.g. 25 °C, 100 °C) and 3 pressures, depending on the desired pressure range. To set up an appropriate calibration sequence support of the IFX sensor application group is available. Maximum Ratings Parameter Symbol Limit Values Unit min. max. Supply voltage VCC – 0.3 6.5 V Supply voltage1) 1) 1h@70°C VCC – 6.52) 2) Reverse polarity; ICC < 300 mA Note: Stresse above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 16.5 V Supply current ICC 10 mA Ambient temperature TMAX – 40 140 °C Storage temperature TS – 60 150 °C Burst pressure pBURST 400 kPa Voltage at pad DTA_IN VDTA_IN – 0.2 3.2 V Voltage at pad SERIAL_CLK/ PROG_VOLT during clock mode VSERIAL_CLK – 0.2 3.2 V Voltage at pad SERIAL_CLK/ PROG_VOLT during fuse mode VPROG – 0.2 12 V "H" output peak current at pad DTA_OUT IOHP 2 mA "L" output peak current at pad DTA_OUT IOLP – 2 mA

Human Body Model (HBM) tests according to: Standard EIA/JESD22-A114-B HBM (covers MIL STD 883D) Parameter Symbol Limit Values Unit Notes min. max. ESD-Protection Pins VCC, GND, VOUT Calibration Pins VESD ± 2 ± 1 kV R = 1.5 kΩ , C = 100 pF Operating Range VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified Parameter Symbol Limit Values Unit min. max. Supply voltage1) 1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V. VCC 4.5 5.5 V Output current (pad 6) Sink2) Source2) 2) Sink: Current into device. Source: Current driven by device IOUT 0.25 0.25 mA mA Operating temperature TA – 40 140 °C Minimum rated pressure pN, MIN 10 50 kPa Maximum rated pressure pN, MAX 102 120 kPa Pressure span PSPAN 70 105 kPa Lifetime tLT 15 year

Electrical Characteristics

VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Output voltage at min. rated pressure1) VOUT, MIN 0.25 0.5 V Output voltage at max. rated pressure1) VOUT, MAX 4.50 4.85 V Overall accuracy ACC see below kPa Ratiometricity2) Rat -25 25 mV Response time3) tR 5 ms

Output ripple @ f > 1 kHz @ f < 1 kHz 7.5 mVpp mVpp Stabilization time4) tS 20 ms Power up time tUP 5 ms 1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V. 2) Definition: for VOUT in the range of 0.1 × VDD to 0.9 × VCC and VCC in the range of 4.50 V to 5.50 V Ratiometric signal error is not included in the overall accuracy! 3) Response time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 4) Stabilization time is defined as the time required for the product to meet the specified output voltage after the pressure has been stabilized. Input Pad SERIAL_CLK / PROG_VOLT Input voltage (fuse mode) VPROGIN – 9 – V Input capacitance CSERIAL_CLK – – 160 pF Input current (clock mode) ICKLIN – 5 – 360 µA Input current (fuse mode) for 10 ms IVPROG 10 – 100 mA "H" Input voltage (clock mode) VHSERIAL_CLK 2.2 – – V "L" Input voltage (clock mode) VLSERIAL_CLK – – 0.5 V Input hysteresis VCINHYST – 480 – mV Input Pad DTA_IN Input capacitance CDTA_IN – 2.5 – pF Input current IDTA_IN – – 360 µA "H" Input voltage VHDTA_IN 2.2 – 3.2 V "L" Input voltage VLDTA_IN – – 0.5 V Input hysteresis VSINHYST – 480 – mV Electrical Characteristics (cont’d) VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Rat VOUT @VCC() VOUT @5 V() VCC

Output Pad DTA_OUT "H" output voltage (IOH = 1 mA) VOH 2.4 – – V "L" output voltage (IOL = -1 mA) VOL – – 0.3 V Timing and Tolerances Clock frequency SERIAL_CLK fCLK 1 – 250 kHz CLKS "H" pulse width tWH 2 – – µs CLKS "L" pulse width tWL 2 – – µs DTA_IN setup time (At Pad DTA_IN) tISU 500 – – ns DTA_IN hold time (At Pad DTA_IN) tICH 500 – – ns DTA_OUT output delay time (At Pad DTA_OUT) tOD 0 – 200 ns ENABLE setup time (At Pad DTA_IN) tENS 500 – – ns ENABLE hold time (At Pad DTA_IN) tENH 500 – – ns PROG_VOLT setup time (At Pad SERIAL_CLK) tVPD 1 – – µs PROG_VOLT hold time (At Pad SERIAL_CLK) tVPH 10 – – ms PROG_VOLT slew rate SR 100 – – V/µs Electrical Characteristics (cont’d) VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max.

The sensor can be calibrated with a linear transfer characteristic between the applied pressure and the output signal: VOUT = VCC × (a × p + b) The output is ratiometric. The gain a and the offset b can be calibrated. A feasible transfer function for the KP110 is for example: VOUT = 5.000 V × (0.0106 × p – 0.32666) With the parameters a and b the following calibration is adjusted: pN, MIN = 40 kPa → VOUT = 0.5 V and pN, MAX = 115 kPa → VOUT = 4.5 V (@VCC = 5 V) Figure4 Possible Transfer Function of the KP110 The output circuit has a low pass filter (min. 1st .Order) with a cut off frequency greater than 500Hz. The output circuit is protected against short circuit to VDD and GND.

Accuracy is the deviation in actual output from nominal output over the entire pressure and temperature range according to figure below due to all sources of error including the following:

  • Pressure: Output deviation from target transfer function over the specified pressure range.
  • Temperature: Output deviation over the temperature range.
  • Aging during operating time The error band is determined by a continuous line through four relevant break points: Note: The gained output signal accuracy depends largely on the quality of the mounting and calibration process accomplished by the customer! Figure5 Overall Accuracy over Temperature Break Point (°C) Typical Accuracy (kPa) – 40 ± 2.4 10 ± 1.2 85 ± 1.2 140 ± 2.4

It is recommended, that the circuit of the pressure sensor IC is protected against overload voltage and electro magnetic influences (like shown in Figure6 ). The output circuitry acts as a low pass decoupling filter between the output of the sensor IC and the A/D input of the µC. Note: Circuitries of customer specific applications may deviate from this circuitry. Figure6 Typical Application Circuit of the KP110 Component Range Typ. value R1 20 kΩ < R1 < 100 kΩ 59 kΩ R2 3.9 kΩ < R1 < 100 kΩ 47 kΩ C1 0 < C1 < 100 nF 0 nF C2 33 nF < C2 < 100 nF 100 nF