KI001P-3 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET KI001P ■ Features
- VDS (V) =-12V
- ID =-2.8 A
- RDS(ON) ＜ 100mΩ (VGS =-4.5V)
- RDS(ON) ＜ 150mΩ (VGS =-2.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.8 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -12 -18 V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V,Tj = 25℃ 1 μA Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4 -0.7 -1.1 V VGS=-4.5V, ID=-1A 100 VGS=-2.5V, ID=-0.5A 150 mΩRDS(On) Static Drain-Source On-Resistance 1.Gate 2.Source 3.Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1