KDZ5.6CE KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 9. 10 1/2 SEMICONDUCTOR TECHNICAL DATA KDZ5.6CE Revision No : 1 ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION.
FEATURES
hNormal Voltage Tolerance about 2%. MAXIMUM RATING (Ta=25) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PD * 150* mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 * Mounted on a glass epoxy circuit board of 2020ɘ, pad dimension of 44ɘ. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Zener Voltage VZ IZ=5mA 5.490 - 5.730 V Dynamic Impedance ZZ IZ=5mA - - 60 ʃ Knee Dynamic Impedance ZZK IZ=0.5mA - - 200 ʃ Reverse Current IR VR=2.5V - - 1 ǺA Total capacitance Ct VR=0.5V, f=1MHz - - 25 pF VR=2.5V, f=1MHz - - 19 ELECTRICAL CHARACTERISTICS (Ta=25) Type Name Marking ZM
- 9. 10 2/2 KDZ5.6CE Revision No : 1 POWER DISSIPATION PD (mW) ZENER CURRENT IZ (mA) IZ - VZ PD - Ta 50 100 150 200 100 150 200 AMBIENT TEMPERATURE Ta ( C) * MOUNTED ON A GLASS EPOXY CIRCUIT BOARD OF 20x20mm PAD DIMENSION OF 4x4mm ZENER VOLTAGE VZ (V) TOTAL CAPACITANCE (pF) Ct - VR REVERSE VOLTAGE VR (V) 01 345 2 201 34567