KDW2503N KEXIN | Alldatasheet
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5 . 5A ,2 0V .RDS(ON) = 0.021 @V GS =4 . 5V RDS(ON) = 0.035 @V GS =2.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 20 V Gate to Source Voltage V GS 12 V Drain Current Continuous (Note 1a) 5.5 A Drain Current Pulsed 30 A Power Dissipation for Single Operation (Note 1a) 1 Power Dissipation for Single Operation (Note 1b) 0.6 Operating and Storage Temperature T J,T STG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 125 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 208 /W ID PD W TSSOP-8 Unit: mm
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D =2 5 0 A 20 V Breakdown Voltage Temperature Coefficient ID =2 5 0 A, Referenced to 25 14 mV/ Zero Gate Voltage Drain Current I DSS VDS =1 6V ,VGS =0V 1 A Gate-Body Leakage, Forward I GSSF VGS =1 2V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 1 2V ,VDS =0V - 1 0 0 n A Gate Threshold Voltage V GS(th) VDS =V GS,I D =2 5 0 A 0.6 0.8 1.5 V Gate Threshold Voltage Temperature Coefficient ID =2 5 0 A, Referenced to 25 -3.2 mV/ VGS =4.5 V, ID =5.5 A 17 21 VGS =2 . 5V ,ID =4 . 2A 2 4 3 5 VGS =4 . 5V ,ID =5.5 A,TJ = 125 23 34 On-State Drain Current I D(on) VGS =4 . 5V ,VDS =5 V 3 0 A Forward Transconductance g FS VDS =5V ,I D =5 . 5 A 2 6 S Input Capacitance C iss 1082 pF Output Capacitance C oss 277 pF Reverse Transfer Capacitance C rss 130 pF Turn-On Delay Time t d(on) 82 0 n s Turn-On Rise Time tr 8 27 ns Turn-Off Delay Time t d(off) 24 38 ns Turn-Off Fall Time t f 81 6 n s Total Gate Charge Vgs=5V Q g 12 17 nC Gate-Source Charge Q gs 2n C Gate-Drain Charge Q gd 3n C Maximum Continuous Drain-Source Diode Forward Current IS 0.83 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 0.83 A (Not 2) 0.7 1.2 V Notes: 1R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) R JA is 125 / W( s t e a d ys t a t e )w h e nm o u n t e do na1i n c h2 copper pad on FR-4. b) R JA is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% VDS =1 0V ,ID =5 . 5 A,VGS=4.5V(Note 2) mRDS(on)Static Drain-Source On-Resistance VDD =1 0V ,ID =1A , VGS =4 . 5V , RGEN =6 VDS =1 0V ,VGS =0V , f=1 . 0M H z KDW2503N