KDV310E KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 4. 20 1/2 SEMICONDUCTOR TECHNICAL DATA KDV310E Revision No : 0 TV Tuning.
FEATURES
High Capacitance Ratio : C2V/C25V=17.0(Min.) Low Series Resistance : rs=1.1 (Max.) Small Package : ESC. MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type NameMarking DV CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 34 V Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR1 VR=32V - - 10 nA IR2 VR=32V, Ta=60 - - 100 Capacitance C2V VR=2V, f=1MHz 47.0 - 53.0 pF C25V VR=25V, f=1MHz 2.65 - 3.0 Capacitance Ratio C2V/C25V - 17.0 - - Series Resistance rS VR=5V, f=470MHz - - 1.1 C(Max.)-C(Min.) 0.02C(Min.) (VR=2~25V) Note : Available in matched group for capacitance to 2.0%.
- 4. 20 2/2Revision No : 0 KDV310E REVERSE CURRENT I (A)R T REVERSE VOLTAGE V (V)R I - VRR 10 40 3020 TOTAL CAPACITANCE C (pF) REVERSE VOLTAGE V (V)R TRC - V s SERIES RESISTANCE r (Ω) REVERSE VOLTAGE V (V)R sRr - V -12 -11 -13 -10 REVERSE VOLTAGE V (V)R TR R∆(LOG C ) / ∆(LOG V ) - V TR∆(LOG C ) / ∆(LOG V ) 103513 0 0.2 0.4 0.6 0.8 f=470MHz 1.0 1015 0 f=1MHz -3.0 1015 0 -2.0 -1.0