KDV303N KEXIN | Alldatasheet
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Technical content
1www.kexin.com.cn Digital FET, N-Channel KDV303N ■ Features
- 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6Ω @ VGS = 2.7 V.
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
- Gate-Source Zener for ESD ruggedness. ＞6kV Human Body Model ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS 8 V Drain Current- Continuous 0.68 A Drain Current- pulse 2 A Power Dissipation for Single Operation PD 0.35 W Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 ℃ Thermal Resistance, Junction-to- Ambient RθJA 357 ℃/W ID 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector Unit: mm SOT-23 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain D G S SMD Type IC SMD Type MOSFET
2 www.kexin.com.cn ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS = 0 V, ID = 250 μA 25 V VDS =20 V, VGS = 0 V 1 μA VDS =20 V, VGS = 0 V,TJ=55℃ 10 μA Gate-Body Leakage Current,Forward IGSSF VGS = 8V, VDS = 0 V 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS = -8 V, VDS = 0 V -100 nA Gate Threshold Voltage * VGS(th) VDS = VGS, ID = 250 μA 0.65 0.8 1.5 V VGS = 4.5V, ID =0.5A 0.33 0.45 Ω VGS = 4.5V, ID = 0.2A, TJ =125℃ 0.52 0.8 Ω VGS = 2.7V, ID =0.2 A 0.44 0.6 Ω On-State Drain Current * ID(on) VGS = 2.7 V, VDS =5 V 0.5 A Forward Transconductance * gFS VDS = 5V, ID = 0.5 A 1.45 S Input Capacitance Ciss VDS = 10 V, 50 pF Output Capacitance Coss VGS = 0 V, 28 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 9 pF Turn-On Delay Time td(on) VDD = 6V, ID =0.5A, 3 6 ns Turn-On Rise Time tr VGS = 4.5V, RGEN = 50Ω 8.5 18 ns Turn-Off Delay Time td(off) 17 30 ns Turn-Off Fall Time tf 13 25 ns Total Gate Charge Qg VDS = 5 V, ID = 0.5A, 1.64 2.3 nC Gate-Source Charge Qgs VGS = 4.5V, 0.38 nC Gate-Drain Charge Qgd 0.45 nC Maximum Continuous Drain-Source Diode Forward Current IS 0.3 A Drain-Source Diode ForwardVoltage VSD VGS = 0 V, IS = 0.5 A 0.83 1.2 V Zero Gate Voltage Drain Current IDSS * Pulse Test: Pulse Width ＜ 300μs, Duty Cycle ＜ 2.0%. RDS(on)Static Drain-Source On-Resistance* KDV303N SMD Type IC SMD Type MOSFET