KDV287E KEC | Alldatasheet
Document overview
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Technical content
- 3. 24 1/1 SEMICONDUCTOR TECHNICAL DATA KDV287E Revision No : 0 UHF SHF TUNING.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.) ᴌLow Series Resistance : rS=1.9ή(Typ.) ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. MAXIMUM RATING (Ta=25ᴱ) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type NameMarking PU CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Peak Reverse Voltage VRM 35(RL=10kή) V Junction Temperature Tj 125 ᴱ Storage Temperature Range Tstg -55ᴕ125 ᴱ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1ỌA 30 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 4.2 - 5.7 pF Capacitance C25V VR=25V, f=1MHz 0.53 - 0.68 pF Capacitance Ratio C2V/C25V 7.3 - - - Series Resistance rS VR=5V, f=470MHz - 1.9 2.3 ή Note : Available in matched group for capacitance to 6%. C(Max.)-C(Min.) C(Min.) ⏊0.06 (VR=2~25V)