KDV270E_15 KEC | Alldatasheet
Document overview
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Technical content
- 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDV270E Revision No : 1 TV TUNING.
FEATURES
¡¤High Capacitance Ratio ¡¤Low Series Resistance MAXIMUM RATING (Ta=25¡É) 1. ANODE 2. CATHODE ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E F 0.13 0.05F G 0.20 0.10+_ GG ELECTRICAL CHARACTERISTICS (Ta=25¡É) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type NameMarking CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 32 V Junction Temperature Tj 125 ¡É Storage Temperature Range Tstg -55¡125 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=32V - - 10 nA Capacitance C1V VR=1V, f=1MHz 39.0 - 43.0 pF C2V VR=2V, f=1MHz - 31.5 - pF C25V VR=25V, f=1MHz - 2.73 - pF C28V VR=28V, f=1MHz 2.30 - 2.60 pF Capacitance Ratio C1V/C28V - 15.7 16.0 - - C25V/C28V - 1.06 1.08 - - Series Resistance rs VR=5V, f=470MHz - - 0.85 §Ù Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) §Z0.02C(Min.) (VR=1~28V)
- 3. 31 2/2Revision No : 1 KDV270E 05 10 15 20 25 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 0.8 REVERSE VOLTAGE VR (V) Ta=25 C f=470MHz CT - VR REVERSE VOLTAGE VR (V) TOTAL CAPACITANCE CT (pF) 10 15 20 25 100 Ta=25 C f=1MHz IR - VR REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (pA) 10 15 20 25 100 Ta=25 C rS - VR SERIES RESISTANCE rS (Ω)