KDV262E KEC | Alldatasheet
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Technical content
CATV TUNING.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=12.5(Typ.) ᴌLow Series Resistance : rS=0.6ή(Typ.) ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. MAXIMUM RATING (Ta=25ᴱ) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F 2000. 3. 24 1/2 SEMICONDUCTOR TECHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 34 V Peak Reverse Voltage VRM 36 (RL=10kή) V Junction Temperature Tj 125 ᴱ Storage Temperature Range Tstg -55ᴕ125 ᴱ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1ỌA 34 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 33 35.5 38 pF Capacitance C25V VR=25V, f=1MHz 2.6 2.85 3.0 pF Capacitance Ratio C2V/C25V 12.0 12.5 - C25V/C28V 1.03 - - Series Resistance rS VR=5V, f=470MHz - 0.6 0.8 ή Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) ⏊0.02 Type NameMarking QU (VR=2~25V)
2/22000. 3. 24 Revision No : 0 -40 AMBIENT TEMPERATURE Ta ( C) C - Ta RREVERSE VOLTAGE V (V) CAPACITANCE C (pF) C - VR 500 100 Ta=25 C CAPACITANCE CHANGE RATIO C (%) V V 10 20 30 f=1MHz REVERSE CURRENT I (A)R 0.1p REVERSE VOLTAGE V (V)R I - VRR 10p 100p 1000p Ta=75 C Ta=50 C Ta=25 C 16 24 32 r - V RREVERSE VOLTAGE V (V) 1 3 10 30 SERIES RESISTANCE r (Ω) R f=470MHz Ta=25 C s s 0.2 0.4 0.6 0.8 1.0 -20 0 20 40 60 80 3 f=1MHz V =2VR 10V 20V25V