KDV258E KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 3. 25 1/2 SEMICONDUCTOR TECHNICAL DATA KDV258E Revision No : 0 VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type NameMarking CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 15 - - V Reverse Current IR VR=10V - - 10 nA Capacitance C1V VR=1V, f=1MHz 19.0 - 21.0 pF C4V VR=4V, f=1MHz 8.5 - 10.0 Capacitance Ratio K - 2.0 - - Series Resistance rS VR=1V, f=470MHz - - 0.45
- 3. 25 2/2Revision No : 0 KDV258E I - V RREVERSE VOLTAGE V (V) 02468 1 0 1 2 1 4 1 6 REVERSE CURRENT I (pA) R R R 100 Ta=25 C C - V RREVERSE VOLTAGE V (V) 0 5 10 15 20 R 100 Ta=25 C f=1MHz CAPACITANCE C (pF)