KDV214E KEC | Alldatasheet

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Technical content

  1. 6. 14 1/2 SEMICONDUCTOR TECHNICAL DATA KDV214E Revision No : 2 TV TUNING.

FEATURES

¡¤High Capacitance Ratio : C2V/C25V=6.5(Typ.) ¡¤Low Series Resistance : rS=0.4§Ù(Typ.) ¡¤Excellent C-V Characteristics, and Small Tracking Error. ¡¤Useful for Small Size Tuner. MAXIMUM RATING (Ta=25¡É) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25¡É) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Peak Reverse Voltage VRM 35 (RL=10k§Ù) V Junction Temperature Tj 125 ¡É Storage Temperature Range Tstg -55¡­125 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1¥ìA 30 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 14.16 - 16.25 pF Capacitance C25V VR=25V, f=1MHz 2.11 - 2.43 pF Capacitance Ratio C2V/C25V 5.90 6.50 7.15 - Series Resistance rS VR=5V, f=470MHz - 0.4 0.55 §Ù Type NameMarking OU C(Max.)-C(Min.) §Z0.025C(Min.) (VR=2~25V) Note : Available in matched group for capacitance to 2.5%.

  1. 6. 14 2/2 KDV214E Revision No : 2 Ta=25 C f=50MHz R SERIES RESISTANCE r (W) 301031 REVERSE VOLTAGE V (V)R r - VC - V RREVERSE VOLTAGE V (V) 0 4 100 CAPACITANCE C (pF) V R f=1MHz 8 12 16 20 24 28 Ta=25 C 0.2 0.4 0.6 0.8 s V SCAPACITANCE CHANGE RATIO C (%) -40 AMBIENT TEMPERATURE Ta ( C) C - Ta Ta=25 C V =5V S SERIES RESISTNACE r (W)S FREQUENCY f (MHz) r - f V =2VR f=1MHz R 100 300 500 1K 0.2 0.4 0.6 0.8 -20 0 20 40 60 80 NOTE : C = x100C(25) C(Ta)-C(25)