KDS9952A KEXIN | Alldatasheet

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N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit D r a i nt oS o u r c eV o l t a g e V DSS 30 -30 V Gate to Source Voltage V GS 20 20 V Drain Current Continuous (Note 1a) 3.7 2.9 A Drain Current Pulsed 15 10 A Power Dissipation for Dual Operation P D Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature T J,T STG Thermal Resistance Junction to Case (Note 1) R JC /W T h e r m a lR e s i s t a n c eJ u n c t i o nt oA m b i e n t ( N o t e1 a ) RJA /W ID PD - 5 5t o1 5 0 W 1.6 0.9

www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Type Min Typ Max Unit VGS =0V ,I D = 250 A N-Ch 30 VGS =0V ,I D = -250 A P-Ch -30 VDS =2 4V ,VGS =0V 2 VDS =2 4V ,VGS =0V , TJ =5 5 25 VDS =- 2 4V ,VGS =0V - 2 VDS =- 2 4V ,VGS =0V , TJ =5 5 -25 Gate-Body Leakage, Forward I GSSF VGS =2 0V ,VDS = 0 V ALL 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS = 0 V ALL -100 nA VDS =V GS,I D = 250 A 11 . 7 2 . 8 VDS =V GS,I D = 250 A,TJ = 125 0.7 1.2 2.2 VDS =V GS,I D = -250 A -1 -1.6 -2.8 VDS =V GS,I D = -250 A,TJ = 125 -0.85 -1.25 -2.5 VGS =1 0V ,ID = 1.0 A 0.06 0.08 VGS =1 0V ,ID =1 . 0A , TJ = 125 0.08 0.13 VGS =4 . 5V ,ID = 0.5 A 0.08 0.11 VGS =4 . 5V ,ID =0 . 5A , TJ = 125 0.11 0.18 VGS =-10 V, ID =-1.0 A 0.11 0.13 VGS =-10 V, ID =-1.0 A,TJ = 125 0.15 0.21 VGS =- 4 . 5V ,ID =- 0.5 A,TJ = 125 0.24 0.32 VGS =1 0V ,VDS =5V N - C h 1 5 VGS =- 1 0V ,VDS =- 5V P - C h - 1 0 VDS =1 5V ,ID =3 . 7A N - C h 6 VDS =- 1 5V ,ID =- 2 . 9A P - C h 4 N-Channel N-Ch 320 V DS =1 0V ,VGS = 0 V,f = 1.0 MHz P-Ch 350 N-Ch 225 P-Channel P-Ch 260 V DS =- 1 0V ,VGS = 0 V,f = 1.0 MHz N-Ch 85 P-Ch 100 N-Channel N-Ch 10 15 V DD =1 0V ,ID =1A P - C h 9 4 0 VGS =1 0V ,RGEN =6 (Note 2) N-Ch 13 20 P-Ch 21 40 P-Channel N-Ch 21 50 V DD =- 1 0V ,ID = -1 A P-Ch 21 90 VGS =- 1 0V ,RGEN =6 (Note 2) N-Ch 5 50 P-Ch 8 50 N-Channel N-Ch 9.5 27 VDS =1 0V ,ID =3 . 7A , VGS = 10 V P-Ch 10 25 N-Ch 1.5 P-Channel P-Ch 1.6 VDS =- 1 0V ,ID =- 2 . 9A , VGS =- 1 0V N - C h 3 . 3 P-Ch 3.4 td(on)Turn-On Delay Time tr N-Ch P-Ch RDS(on)Static Drain-Source On-Resistance ID(on)On– State Drain Current Drain– Source Breakdown Voltage B VDSS Zero Gate Voltage Drain Current I DSS CossOutput Capacitance CrssReverse Transfer Capacitance N-Ch P-Ch VGS(th)Gate Threshold Voltage N-Ch P-Ch gFSForward Transconductance CissInput Capacitance Turn-On Rise Time td(off)Turn-Off Delay Time tfTurn-Off Fall Time QgTotal Gate Charge QgsGate– Source Charge QgdGate– Drain Charge V A V A S pF pF pF ns ns ns ns nC nC nC KDS9952A

www.kexin.com.cn 3 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Type Min Typ Max Unit N-Ch 1.2 P-Ch -1.2 VGS =0V ,I S =1 . 2 5A ( N o t e2 ) N - C h 0 . 8 1 . 3 VGS =0V ,I S =-1.25 A (Note 2) P-Ch -0.8 -1.3 VGS=0 V, IF=1.25 A,dIF/dt=100A/ s N-Ch 75 VGS=0 V, IF=-1.25 A,dIF/dt=100A/ s P-Ch 100 IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trrReverse Recovery Time A V ns KDS9952A