KDS8928A KEXIN | Alldatasheet
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5 . 5A ,3 0V RDS(ON) = 0.030 @V GS =4 . 5 V RDS(ON) = 0.038 @V GS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 @V GS =- 4.5 V RDS(ON) = 0.070 @V GS =-2.5V High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage V DSS 30 30 V Gate to Source Voltage V GS 8- 8 V Drain Current Continuous (Note 1a) 5.5 -4 A Drain Current Pulsed 20 -20 A Power Dissipation for Single Operation P D W Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature T J,T STG Thermal Resistance Junction to Ambient (Note 1a) R JA /W Thermal Resistance Junction to Case (Note 1) R JC /W - 5 5t o1 5 0 I D 1.6 PD W1 0.9
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS =0V ,I D = 250 A N-Ch 30 VGS =0V ,I D = -250 A P-Ch -20 ID = 250 A, Referenced to 25 N-Ch 32 ID = -250 A, Referenced to 25 P-Ch -23 VDS = 24V, VGS =0V N - C h 1 VDS =- 1 6V ,VGS =0V P - C h - 1 VGS = 8V, VDS =0V N-Ch 100 VGS = 8V ,VDS =0V P-Ch 100 VDS =V GS,I D = 250 A N-Ch 0.4 0.67 VDS =V GS,I D = -250 A P-Ch -0.4 -0.6 ID = 250 A, Referenced to 25 N-Ch -3 ID = -250 A, Referenced to 25 P-Ch 4 VGS =4 . 5V ,ID =5.5A 0.025 0.03 VGS =2 . 5V ,ID = 4.5A 0.031 0.038 VGS =- 4 . 5V ,ID =-4 A 0.043 0.055 VGS =- 2 . 5V ,ID =-3.4 A .059 0.072 VGS =4 . 5V ,VDS =5 V N - C h 2 0 VGS =- 4 . 5V ,VDS =- 5 V P - C h - 2 0 VDS =5 V ,ID =5 . 5 A N - C h 2 0 VDS =- 5 V ,ID = -4A P-Ch 13 N-Channel N-Ch 900 VDS =1 0V ,VGS = 0 V,f = 1.0 MHz P-Ch 1130 N-Ch 410 P-Channel P-Ch 480 VDS =- 1 0V ,VGS = 0 V,f = 1.0 MHz N-Ch 110 P-Ch 120 N-Channel N-Ch 6 12 VDD =6V ,I D = 1 A, P-Ch 8 16 VGS =4 . 5V ,RGEN =6 (Note 2) N-Ch 19 31 P-Ch 23 37 P-Channel N-Ch 42 67 VDD =- 1 0V ,ID = -1 A, P-Ch 260 360 VGS =- 4 . 5V ,RGEN =6 (Note 2) N-Ch 13 24 P-Ch 90 125 N-Channel N-Ch 19.8 28 VDS =10V,ID=5.5A,VGS=4.5V(Note 2) P-Ch 20 28 N-Ch 2 P-Channel P-Ch 2.8 VDS=-5V,ID=-4A,VGS=-5V(Note 2) N-Ch 6.3 P-Ch 3.2 nC Testconditons ns ns nC nC pF pF ns ns A S pF P-Ch V mV/ A nA V mV/ m QgdGate-Drain Charge QgTotal Gate Charge Gate-Source Charge Q gs td(off)Turn-Off Delay Time tfTurn-Off Fall Time td(on)Turn-On Delay Time trTurn-On Rise Time Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance g FSForward Transconductance Gate Threshold Voltage Temperature Coefficient RDS(on)Static Drain-Source On-Resistance ID(on)On-State Drain Current RDS(on)Static Drain-Source On-Resistance VGS(th)Gate Threshold Voltage N-Ch BVDSSDrain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate-Body Leakage I GSS IDSSZero Gate Voltage Drain Current KDS8928A
www.kexin.com.cn 3 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit N-Ch 1.3 P-Ch -1.3 VGS =0V ,I S = 1.3A (Not 2) N-Ch 0.68 1.2 VGS =0V ,I S = -1.3A (Not 2) P-Ch -0.7 -1.2 A V Testconditons VSDDrain-Source Diode Forward Voltage IS Maximum Continuous Drain-Source Diode Forward Current KDS8928A