KDS8333C KEXIN | Alldatasheet
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4 . 1A ,3 0V RDS(ON) = 80m @V GS =1 0V RDS(ON) = 130m @V GS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m @V GS =- 10 V RDS(ON) = 200 m @V GS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage V DSS 30 -60 V Gate to Source Voltage V GS 16 20 V Drain Current Continuous (Note 1a) 4.1 -3.4 A Drain Current Pulsed 20 -20 A Power Dissipation for Single Operation P D W Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature T J,T STG Thermal Resistance Junction to Ambient (Note 1a) R JA /W Thermal Resistance Junction to Case (Note 1) R JC /W ID 1.6 PD W1 0.9 - 5 5t o1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS =0V ,I D =2 5 0 A N-Ch 30 VGS =0V ,I D =- 2 5 0A P-Ch -30 ID =2 5 0 A, Referenced to 25 N-Ch 25 ID =- 2 5 0A, Referenced to 25 P-Ch -22 VDS = 24V, VGS =0V N - C h 1 VDS =- 2 4V ,VGS =0V P - C h - 1 VGS = 16V, VDS =0V N-Ch 100 VGS = 20 V, VDS =0V P-Ch 100 VDS =V GS,I D =2 5 0 A N-Ch 1 1.7 3 VDS =V GS,I D =- 2 5 0A P-Ch -1 -1.8 -3 ID =2 5 0 A, Referenced to 25 N-Ch -4.2 ID =- 2 5 0A, Referenced to 25 P-Ch 3.7 VGS =1 0V ,ID =4.1A 67 80 VGS =1 0V ,ID =4 . 1A , TJ =1 2 5 81 130 VGS =4 . 5V ,ID =3.2 A 103 145 VGS =- 1 0V ,ID =-3.4A 105 130 VGS =- 1 0V ,ID =-3.4 A,TJ = 125 167 200 VGS =- 4 . 5V ,ID =-2.5A 147 220 VGS =1 0V ,VDS =5 V N - C h 1 0 VGS =- 1 0V ,VDS =- 5 V P - C h - 5 VDS =5 V ,ID =4 . 1 A N - C h 9 VDS =- 5 V ,ID = -3.4A P-Ch 5 N-Channel N-Ch 282 VDS =1 0V ,VGS = 0 V,f = 1.0 MHz P-Ch 185 N-Ch 49 P-Channel P-Ch 56 VDS =- 1 0V ,VGS = 0 V,f = 1.0 MHz N-Ch 20 P-Ch 26 VGS= 15 mV, f=1.0MHz N-Ch 2.3 VGS=-15 mV, f=1.0MHz P-Ch -9.6 N-Channel N-Ch 4.5 9 VDD =1 0V ,ID = 1 A, P-Ch 4.5 9 VGS =4 . 5V ,RGEN =6 (Note 2) N-Ch 6 12 P-Ch 13 23 P-Channel N-Ch 19 34 VDD =- 1 0V ,ID =- 1A , P - C h 1 1 2 0 VGS =- 4 . 5V ,RGEN =6 (Note 2) N-Ch 1.5 3 P-Ch 2 4 N-Channel N-Ch 4.7 6.6 VDS =10V,ID=4.1A,VGS=4.5V P-Ch 4.1 5.7 RGEN =6 (Note 2) N-Ch 0.9 P-Channel P-Ch 0.8 VDS=-10V,ID=-3.4A,VGS=-4.5V(Note 2) N-Ch 0.6 P-Ch 0.4 VGS(th)Gate Threshold Voltage N-Ch BVDSSDrain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate-Body Leakage I GSS IDSSZero Gate Voltage Drain Current Gate Threshold Voltage Temperature Coefficient RDS(on)Static Drain-Source On-Resistance ID(on)On-State Drain Current RDS(on)Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance gFSForward Transconductance Turn-Off Delay Time tfTurn-Off Fall Time td(on)Turn-On Delay Time trTurn-On Rise Time QgdGate-Drain Charge P-Ch V mV/ A nA V mV/ m A S pF Qg Qgs td(off) Ciss Coss Crss Testconditons ns ns nC nC pF pF ns ns Gate Resistance R G nC Total Gate Charge Gate-Source Charge KDS8333C
www.kexin.com.cn 3 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS =0V ,I S = 1.3A (Not 2) N-Ch 0.8 1.2 VGS =0V ,I S = -1.3A (Not 2) P-Ch 0.8 -1.2 IF =4 . 1A ,diF/dt = 100 A/ s N-Ch 16.3 IF =- 3 . 4A ,diF/dt = 100 A/ s P-Ch 14.5 IF =4 . 1A ,diF/dt = 100 A/ s N-Ch 26.7 IF =- 3 . 4A ,diF/dt = 100 A/ s P-Ch 21.1 Diode Reverse Recovery Charge VSDDrain-Source Diode Forward Voltage Qrr Testconditons nC Diode Reverse Recovery Time t rr nS V KDS8333C