KDS6685 KEXIN | Alldatasheet
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-8.8 A, -30 V. RDS(ON) = 20m @V GS =- 1 0V RDS(ON) = 35m @V GS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS -30 V Gate to Source Voltage V GS 25 V Drain Current Continuous (Note 1a) -8.8 A Drain Current Pulsed -50 A Power Dissipation for Single Operation (Note 1a) 2.5 Power Dissipation for Single Operation (Note 1b) 1.2 Power Dissipation for Single Operation (Note 1c) 1 Operating and Storage Temperature T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W ID PD W
www.kexin.com.cn2 SMD Type ICSMD Type IC KDS6685 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D = -250 A -30 V Breakdown Voltage Temperature Coefficient ID =- 2 5 0A, Referenced to 25 -21 mV/ Zero Gate Voltage Drain Current I DSS VDS =- 2 4V ,VGS =0V - 1 A Gate-Body Leakage, Forward I GSSF VGS = 25V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 5V ,VDS = 0 V -100 nA Gate Threshold Voltage(Not 2) V GS(th) VDS =V GS,I D =- 2 5 0A -1 -1.7 -3 V Gate Threshold Voltage Temperature Coefficient(Not 2) ID =- 2 5 0A, Referenced to 25 5 mV/ VGS =- 1 0V ,ID =-8.8 A 15 24 VGS =- 4 . 5V ,ID = -6.7 A 22 32 VGS =- 1 0V ,ID =-8.8 A,TJ = 125 19 39 On-State Drain Current I D(on) VGS =- 1 0V ,VDS =- 5 V - 2 5 A Forward Transconductance g FS VDS =- 5V ,ID = -8.8A 24 S Input Capacitance C iss 1604 pF Output Capacitance C oss 408 pF Reverse Transfer Capacitance C rss 202 pF Turn-On Delay Time t d(on) 13 23 ns Turn-On Rise Time tr 13.5 24 ns Turn-Off Delay Time t d(off) 42 68 ns Turn-Off Fall Time t f 25 40 ns Total Gate Charge Q g 17 24 nC Gate-Source Charge Q gs 5n C Gate-Drain Charge Q gd 6n C Maximum Continuous Drain-Source Diode Forward Current IS -2.1 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = -2.1A (Not 2) -0.73 -1.2 V VDS =- 1 5V ,ID =-8.8 A,VGS=-5V(Note 2) mRDS(on)Static Drain-Source On-Resistance(Not 2) VDD =- 1 5V ,ID =- 1A , VGS =- 1 0V ,RGEN =6 (Note 2) VDS =- 1 5V ,VGS =0V , f=1 . 0M H z