KDS4470 KEXIN | Alldatasheet
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1 2 . 5A ,4 0V .RDS(ON) =9 m @V GS =1 0V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 40 V Gate to Source Voltage V GS +30/-20 V Drain Current Continuous (Note 1a) 12.5 A Drain Current Pulsed 50 A Power dissipation (Note 1a) 2.5 Power dissipation (Note 1b) 1.4 Power dissipation (Note 1c) 1.2 Operating and Storage Temperature Range T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W ID PD W
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Avalanche Energy E AS Single Pulse,VDD=40V,ID=12.5A( Not 2) 370 mJ Drain-Source Avalanche Current I AS ( Not 2) 12.5 A Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D = 250 A 40 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 42 mV/ Zero Gate Voltage Drain Current I DSS VDS =3 2V ,VGS =0V 1 A Gate-Body Leakage, Forward I GSSF VGS =3 0V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS = 0 V -100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D = 250 A 23 . 95 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -8 mV/ VGS =1 0V ,ID = 12.5 A 6 9 VGS =1 0V ,ID =12.5 A,TJ = 125 91 4 On-State Drain Current I D(on) VGS =1 0V ,VDS =5V 2 5 A Forward Transconductance g FS VDS = 10V, ID = 12.5 A 45 S Input Capacitance C iss 2659 pF Output Capacitance C oss 605 pF Reverse Transfer Capacitance C rss 298 pF Turn-On Delay Time t d(on) 14 25 ns Turn-On Rise Time tr 12 22 ns Turn-Off Delay Time t d(off) 37 59 ns Turn-Off Fall Time t f 29 46 ns Total Gate Charge Q g 45 63 nC Gate-Source Charge Q gs 27 nC Gate-Drain Charge Q gd 5n C Maximum Continuous Drain-Source Diode Forward Current IS 2.1 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 2.1 A (Not 2) 0.7 1.2 V Diode Reverse Recovery Time trr IF = 12.5 A, diF/dt = 100 A/ s 33 nS Diode Reverse Recovery Charge Qrr 39 nC VDS =2 0V ,ID = 12.5 A,VGS =1 0V (Note 2) mRDS(on)Static Drain-Source On-Resistance VDD =2 0V ,ID =1A , VGS =1 0V ,RGEN = 6 (Note 2) VDS =2 0V ,VGS =0V , f=1 . 0M H z KDS4470